Samsung 990 PRO M.2 4 TB PCI Express 4.0 NVMe V-NAND MLC
DevSlp (device sleep) support: Yes S.M.A.R.T. support: Yes Write speed: 6900 MB/s Security algorithms: 256-bit AES SSD form factor: M.2 Hardware encryption: Yes TRIM support: Yes PCI Express interface data lanes: x4 Protection features: Heat resistant Memory type: V-NAND MLC NVMe: Yes Random write (4KB): 1550000 IOPS Mean time between failures (MTBF): 1500000 h Component for: PC Read speed: 7450 MB/s Random read (4KB): 1400000 IOPS NVMe version: 2.0 SSD capacity: 4 TB Interface: PCI Express 4.0 Operating voltage: 3.3 V Power consumption (average): 5.5 W Operating temperature (T-T): 0 - 70 °C Operating shock: 1500 G Width: 80 mm Height: 22 mm Depth: 2.3 mm Weight: 9 g
Samsung 990 PRO M.2 4 TB PCI Express 4.0 NVMe V-NAND MLC
DevSlp (device sleep) support: Yes S.M.A.R.T. support: Yes Write speed: 6900 MB/s Security algorithms: 256-bit AES SSD form factor: M.2 Hardware encryption: Yes TRIM support: Yes PCI Express interface data lanes: x4 Protection features: Heat resistant Memory type: V-NAND MLC NVMe: Yes Random write (4KB): 1550000 IOPS Mean time between failures (MTBF): 1500000 h Component for: PC Read speed: 7450 MB/s Random read (4KB): 1400000 IOPS NVMe version: 2.0 SSD capacity: 4 TB Interface: PCI Express 4.0 Operating voltage: 3.3 V Power consumption (average): 5.5 W Operating temperature (T-T): 0 - 70 °C Operating shock: 1500 G Width: 80 mm Height: 22 mm Depth: 2.3 mm Weight: 9 g