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DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126, Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 4 (Min.) MHz, Dimensions: 8.2 x 2.9 x 11.2mm, Maximum Base Emitter Saturation Voltage: 1.4 V, Maximum Collector Emitter Saturation Voltage: 1 V

GBP 0.24
1

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126, Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 4 (Min.) MHz, Dimensions: 8.2 x 2.9 x 11.2mm, Maximum Base Emitter Saturation Voltage: 1.4 V, Maximum Collector Emitter Saturation Voltage: 1 V

GBP 0.33
1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.21
1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.48
1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.21
1

DiodesZetex ,Audio1.8W, 16-Pin SOP PAM8403DR

DiodesZetex ,Audio1.8W, 16-Pin SOP PAM8403DR

DiodesZetex ,Audio1.8W, 16-Pin SOP PAM8403DR, Amplifier Type: Class-D, Output Type: 2 Channel Stereo, Application: Cellular Phone, Headphone, Monitor, Portable Computer, Portable DVD Player, Speaker, TV Projector, Maximum Power: 1.8 W @ 8 Ω, 3.2 W @ 4 Ω, Mounting Type: Surface Mount, Typical Single Supply Voltage: 2.5 → 5.5 V, Input Signal Type: Differential, Dimensions: 10 x 4 x 1.55mm, Length: 10mm, Maximum Operating Temperature: +85 °C

GBP 0.69
1