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DiodesZetex P-Channel MOSFET, 3.2 A, 20 V, 6-Pin U-DFN2020-6 Diodes Inc DMP2090UFDB-7

GBP 0.11

1

DiodesZetex P-Channel MOSFET, 3.2 A, 20 V, 6-Pin U-DFN2020-6 Diodes Inc DMP2090UFDB-7

DiodesZetex P-Channel MOSFET, 3.2 A, 20 V, 6-Pin U-DFN2020-6 Diodes Inc DMP2090UFDB-7, Maximum Drain Source Resistance: 0.9 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V

GBP 0.07

1

DiodesZetex P-Channel MOSFET, 3.2 A, 20 V, 6-Pin U-DFN2020-6 Diodes Inc DMP2090UFDB-7

DiodesZetex P-Channel MOSFET, 3.2 A, 20 V, 6-Pin U-DFN2020-6 Diodes Inc DMP2090UFDB-7, Maximum Drain Source Resistance: 0.9 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V

GBP 0.11

1

DiodesZetex Dual P-Channel MOSFET, 3.2 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A17DN8TA

DiodesZetex Dual P-Channel MOSFET, 3.2 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A17DN8TA, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.15 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.81

1

DiodesZetex Dual P-Channel MOSFET, 3.2 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A17DN8TA

DiodesZetex Dual P-Channel MOSFET, 3.2 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A17DN8TA, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.15 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.94

1

DiodesZetex Dual P-Channel MOSFET, 3.2 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A17DN8TA

DiodesZetex Dual P-Channel MOSFET, 3.2 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A17DN8TA, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.15 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.54

1

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126, Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Minimum DC Current Gain: 8, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 4 (Min.) MHz, Dimensions: 8.2 x 2.9 x 11.2mm

GBP 0.32

1

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126, Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 4 (Min.) MHz, Dimensions: 8.2 x 2.9 x 11.2mm, Maximum Base Emitter Saturation Voltage: 1.4 V, Maximum Collector Emitter Saturation Voltage: 1 V

GBP 0.33

1

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126, Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 4 (Min.) MHz, Dimensions: 8.2 x 2.9 x 11.2mm, Maximum Base Emitter Saturation Voltage: 1.4 V, Maximum Collector Emitter Saturation Voltage: 1 V

GBP 0.24

1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.21

1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.21

1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.48

1

DiodesZetex AP22804AM8-13, Dual USB Power Switch, High Side, 65mΩ, 1.6 V min. 8-Pin, MSOP

DiodesZetex AP22804AM8-13, Dual USB Power Switch, High Side, 65mΩ, 1.6 V min. 8-Pin, MSOP, Mounting Type: Surface Mount, Current Limit: 3.3A, Dimensions: 3.1 x 3.1 x 0.95mm, Length: 3.1mm, Maximum Input Voltage: 2.4 V, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 0.08

1

DiodesZetex AP22804BM8-13, Dual USB Power Switch, High Side, 65mΩ, 1.6 V min. 8-Pin, MSOP

DiodesZetex AP22804BM8-13, Dual USB Power Switch, High Side, 65mΩ, 1.6 V min. 8-Pin, MSOP, Mounting Type: Surface Mount, Current Limit: 3.3A, Dimensions: 3.1 x 3.1 x 0.95mm, Length: 3.1mm, Maximum Input Voltage: 2.4 V, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 0.08

1

DiodesZetex AP22814ASN-7, USB Power Switch, High Side, 65mΩ, 1.6 V min. 5 + Tab-Pin, U-DFN2020

DiodesZetex AP22814ASN-7, USB Power Switch, High Side, 65mΩ, 1.6 V min. 5 + Tab-Pin, U-DFN2020, Mounting Type: Surface Mount, Current Limit: 3.8A, Dimensions: 2.07 x 2.07 x 0.58mm, Length: 2.07mm, Maximum Input Voltage: 2.4 V, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 0.09

1

DiodesZetex AH3365Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3365Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.25

1

DiodesZetex AH3390Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3390Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.51

1

DiodesZetex AH3369Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3369Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.33

1

DiodesZetex AH3364Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3364Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.49

1

DiodesZetex AH3390Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3390Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.34

1

DiodesZetex AH3368Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3368Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.24

1

DiodesZetex AH3391Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3391Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.56

1

DiodesZetex AH3367Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3367Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.49

1

DiodesZetex AH3391Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3391Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.41

1

DiodesZetex AH3367Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3367Q-P-B, Hall Effect Sensors, 3-Pin SIP, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 28 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Automotive Standard: AEC-Q100, Dimensions: 4.3 x 3.2 x 1.6mm

GBP 0.33

1

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DiodesZetex P-Channel MOSFET, 3.2 A, 20 V, 6-Pin U-DFN2020-6 Diodes Inc DMP2090UFDB-7

DiodesZetex P-Channel MOSFET, 3.2 A, 20 V, 6-Pin U-DFN2020-6 Diodes Inc DMP2090UFDB-7

DiodesZetex P-Channel MOSFET, 3.2 A, 20 V, 6-Pin U-DFN2020-6 Diodes Inc DMP2090UFDB-7

DiodesZetex Dual P-Channel MOSFET, 3.2 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A17DN8TA

DiodesZetex Dual P-Channel MOSFET, 3.2 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A17DN8TA

DiodesZetex Dual P-Channel MOSFET, 3.2 A, 60 V, 8-Pin SOIC Diodes Inc ZXMP6A17DN8TA

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex AP22804AM8-13, Dual USB Power Switch, High Side, 65mΩ, 1.6 V min. 8-Pin, MSOP

DiodesZetex AP22804BM8-13, Dual USB Power Switch, High Side, 65mΩ, 1.6 V min. 8-Pin, MSOP

DiodesZetex AP22814ASN-7, USB Power Switch, High Side, 65mΩ, 1.6 V min. 5 + Tab-Pin, U-DFN2020

DiodesZetex AH3365Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3390Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3369Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3364Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3390Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3368Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3391Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3367Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3391Q-P-B, Hall Effect Sensors, 3-Pin SIP

DiodesZetex AH3367Q-P-B, Hall Effect Sensors, 3-Pin SIP