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IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 480 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 8.82

1

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 480 W, Switching Speed: 50kHz, Transistor Configuration: Single, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 10.00

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 13.22

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.06

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.54

1

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 480 W, Switching Speed: 50kHz, Transistor Configuration: Single, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm, Maximum Operating Temperature: +150 °C

GBP 9.49

1

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 7.47

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXFK64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXFK64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 14.06

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXFK64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXFK64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 15.27

1

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 8.13

1

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 7.70

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXFK64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXFK64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.16mm, Length: 19.96mm

GBP 15.64

1

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IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS IXYH40N120C3D1 IGBT, 64 A 1200 V, 3-Pin TO-247, Through Hole

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXFK64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXFK64N50Q3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 600 V, 3-Pin TO-264 IXFK64N60P3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin TO-264 IXFK64N50Q3