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Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 BSS606NH6327XTSA1

Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 BSS606NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.18

1

Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 BSS606NH6327XTSA1

Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 BSS606NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.23

1

Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 BSS606NH6327XTSA1

Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 BSS606NH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.37

1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC022N04LSATMA1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC022N04LSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 69 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1V

GBP 0.58

1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC022N04LSATMA1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC022N04LSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 69 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1V

GBP 1.27

1

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 32 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +170 °C, Minimum Operating Temperature: -40 °C, Height: 0.9mm, Dimensions: 2.9 x 1.3 x 0.9mm, Typical Magnetic Sensor Hysteresis: 3.2 mT, MPN: TLE49643MXTSA1

GBP 0.28

1

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23, Mounting Type: Surface Mount, Magnetic Type: Unipolar, Maximum Operating Supply Voltage: 32 V, Minimum Operating Supply Voltage: 3 V, Maximum Operating Temperature: +170 °C, Minimum Operating Temperature: -40 °C, Height: 0.9mm, Dimensions: 2.9 x 1.3 x 0.9mm, Typical Magnetic Sensor Hysteresis: 3.2 mT, MPN: TLE49643MXTSA1

GBP 0.49

1

Infineon N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN IRFH7085TRPBF

Infineon N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN IRFH7085TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 1.34

1

Infineon IFX27001TFV33ATMA1, LDO Regulator, 1A, 3.3 V 3-Pin, DPAK

Infineon IFX27001TFV33ATMA1, LDO Regulator, 1A, 3.3 V 3-Pin, DPAK, Output Type: Fixed, Package Type: TO-252, Mounting Type: Surface Mount, Minimum Input Voltage: 3.2 V, Maximum Input Voltage: 40 V, Polarity: Positive, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +125 °C, Dimensions: 6.5 x 7.22 x 2.3mm, Length: 6.5mm, MPN: IFX27001TF V33

GBP 0.82

1

Infineon N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF

Infineon N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 125 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V, Height: 16.51mm

GBP 0.71

1

Infineon N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN IRFH7085TRPBF

Infineon N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN IRFH7085TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 0.68

1

Infineon IFX27001TFVATMA1, 1 Low Dropout Voltage, Voltage Regulator 1A 3-Pin, TO-252

Infineon IFX27001TFVATMA1, 1 Low Dropout Voltage, Voltage Regulator 1A 3-Pin, TO-252, Output Voltage: 1.25 → 38 V, Output Type: Adjustable, Mounting Type: Surface Mount, Minimum Input Voltage: 3.2 V, Maximum Input Voltage: 40 V, Polarity: Positive, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +125 °C, Dimensions: 6.5 x 7.22 x 2.3mm, Length: 6.5mm

GBP 0.85

1

Infineon N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF

Infineon N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 125 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1V, Height: 16.51mm

GBP 0.74

1

Infineon N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN IRFH7085TRPBF

Infineon N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN IRFH7085TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 1.19

1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S403ATMA2

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S403ATMA2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 167 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.4mm

GBP 2.17

1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB029N06N3GE8187ATMA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB029N06N3GE8187ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 188 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 1.63

1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 188 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 1.98

1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 188 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 1.88

1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 188 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 1.67

1

Infineon N-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 IPP80N03S4L03AKSA1

Infineon N-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 IPP80N03S4L03AKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 136 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Forward Diode Voltage: 1.3V

GBP 1.46

1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S403ATMA2

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S403ATMA2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 167 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.4mm

GBP 1.24

1

Infineon N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220FP IPA032N06N3GXKSA1

Infineon N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220FP IPA032N06N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 41 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 1.80

1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB029N06N3GE8187ATMA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB029N06N3GE8187ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 188 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 1.01

1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB029N06N3GE8187ATMA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB029N06N3GE8187ATMA1, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 188 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm

GBP 1.63

1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S403ATMA2

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S403ATMA2, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 167 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.4mm

GBP 2.17

1

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Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 BSS606NH6327XTSA1

Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 BSS606NH6327XTSA1

Infineon N-Channel MOSFET, 3.2 A, 60 V, 4-Pin PG-SOT-89 BSS606NH6327XTSA1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC022N04LSATMA1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC022N04LSATMA1

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon TLE4964-3M, Hall Effect Sensors, 3-Pin PG-SOT23

Infineon N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN IRFH7085TRPBF

Infineon IFX27001TFV33ATMA1, LDO Regulator, 1A, 3.3 V 3-Pin, DPAK

Infineon N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF

Infineon N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN IRFH7085TRPBF

Infineon IFX27001TFVATMA1, 1 Low Dropout Voltage, Voltage Regulator 1A 3-Pin, TO-252

Infineon N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF

Infineon N-Channel MOSFET, 147 A, 60 V, 8-Pin PQFN IRFH7085TRPBF

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S403ATMA2

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB029N06N3GE8187ATMA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1

Infineon N-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 IPP80N03S4L03AKSA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S403ATMA2

Infineon N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220FP IPA032N06N3GXKSA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB029N06N3GE8187ATMA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB029N06N3GE8187ATMA1

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S403ATMA2