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MagnaChip N-Channel MOSFET, 2.8 A, 500 V, 3-Pin TO-220F MDF3N50TH

MagnaChip N-Channel MOSFET, 2.8 A, 500 V, 3-Pin TO-220F MDF3N50TH, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Power Dissipation: 30.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V, Height: 16.13mm, Length: 10.71mm

GBP 0.19

1

MagnaChip N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F MDF9N50BTH

MagnaChip N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F MDF9N50BTH, Mounting Type: Through Hole, Maximum Drain Source Resistance: 850 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 38 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V, Height: 16.13mm

GBP 0.62

1

MagnaChip N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F

MagnaChip N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 850 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 38 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V, Height: 16.13mm, MPN: MDF9N50BTH

GBP 0.56

1

MagnaChip N-Channel MOSFET, 2 A, 400 V, 3-Pin DPAK MDD3N40RH

MagnaChip N-Channel MOSFET, 2 A, 400 V, 3-Pin DPAK MDD3N40RH, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V, Height: 2.39mm

GBP 0.15

1

MagnaChip N-Channel MOSFET, 2 A, 400 V, 3-Pin DPAK MDD3N40RH

MagnaChip N-Channel MOSFET, 2 A, 400 V, 3-Pin DPAK MDD3N40RH, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V, Height: 2.39mm

GBP 0.14

1

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MagnaChip N-Channel MOSFET, 2.8 A, 500 V, 3-Pin TO-220F MDF3N50TH

MagnaChip N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F MDF9N50BTH

MagnaChip N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F

MagnaChip N-Channel MOSFET, 2 A, 400 V, 3-Pin DPAK MDD3N40RH

MagnaChip N-Channel MOSFET, 2 A, 400 V, 3-Pin DPAK MDD3N40RH