ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007
ROHM Dual SiC N-Channel SiC Power Module, 180 A, 1200 V, 4-Pin C BSM180D12P3C007, Mounting Type: Surface Mount, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.6V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 880 W, Height: 17mm, Length: 122mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C