KlikkMedia | Google Hirdetés X Online Marketing Tanácsadás

STMicroelectronics EVALSTGAP1AS Evaluation Board for STGAP1AS for IGBTs, N-Channel Power MOSFETs

GBP 33.69

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

GBP 27.21

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

GBP 24.75

1

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247™ SCT50N120

GBP 28.13

1

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 SCTWA30N120

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247™ SCTWA30N120

GBP 18.52

1

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

GBP 25.03

1

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

GBP 26.30

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

GBP 29.54

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 28.95

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 25.52

1

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

GBP 22.60

1

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247™ SCT50N120, Maximum Drain Source Resistance: 0.59 Ω, Maximum Gate Threshold Voltage: 3V

GBP 28.70

1

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 SCTWA30N120

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247™ SCTWA30N120, Maximum Drain Source Resistance: 0.09 Ω, Maximum Gate Threshold Voltage: 3.5V

GBP 18.93

1

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247™ SCT50N120, Maximum Drain Source Resistance: 0.59 Ω, Maximum Gate Threshold Voltage: 3V

GBP 24.02

1

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 SCTWA30N120

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247™ SCTWA30N120, Maximum Drain Source Resistance: 0.09 Ω, Maximum Gate Threshold Voltage: 3.5V

GBP 21.47

1

STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 1200 V, 3-Pin HiP247 SCT30N120H

STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 1200 V, 3-Pin HiP247 SCT30N120H, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V

GBP 18.79

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

GBP 30.14

1

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG, Maximum Drain Source Resistance: 0.105 Ω, Maximum Gate Threshold Voltage: 5V

GBP 22.83

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.024 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 22.02

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.024 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 25.26

1

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.1V

GBP 19.23

1

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 18.06

1

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 27.98

1

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7, Maximum Drain Source Resistance: 0.065 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.1V

GBP 28.41

1

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG, Maximum Drain Source Resistance: 0.02 Ω, Maximum Gate Threshold Voltage: 5V

GBP 18.83

1

Performance Marketing Agency

Gain the Advantage with KlikkMedia

Brand

Gender

Merchant

Price (EUR)

STMicroelectronics EVALSTGAP1AS Evaluation Board for STGAP1AS for IGBTs, N-Channel Power MOSFETs

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 SCTWA30N120

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 SCTWA30N120

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 SCTWA30N120

STMicroelectronics SiC N-Channel SiC Power Module, 45 A, 1200 V, 3-Pin HiP247 SCT30N120H

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 SCTW100N65G2AG

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK SCTH50N120-7

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG