Texas Instruments N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK
Texas Instruments N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.8 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1V, Height: 4.83mm, Length: 10.67mm, MPN: CSD19536KTTT