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Toshiba 30V 2A, Diode, 2-Pin M-FLAT CMS06(TE12L,Q,M)

Toshiba 30V 2A, Diode, 2-Pin M-FLAT CMS06(TE12L,Q,M), Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 370mV, Peak Non-Repetitive Forward Surge Current: 40A

GBP 0.37

1

Toshiba 30V 1A, Schottky Diode, 2-Pin M-FLAT CMS10I30A

Toshiba 30V 1A, Schottky Diode, 2-Pin M-FLAT CMS10I30A, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 360mV

GBP 0.14

1

Toshiba 30V 1A, Schottky Diode, 2-Pin M-FLAT CMS10I30A

Toshiba 30V 1A, Schottky Diode, 2-Pin M-FLAT CMS10I30A, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 360mV

GBP 0.23

1

Toshiba 30V 1A, Schottky Diode, 2-Pin M-FLAT CMS10I30A

Toshiba 30V 1A, Schottky Diode, 2-Pin M-FLAT CMS10I30A, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 360mV

GBP 0.22

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

GBP 1.49

1

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

GBP 1.24

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

GBP 1.28

1

Toshiba 30V 1A, Diode, 2-Pin US-FLAT CUS01(TE85L,Q,M)

Toshiba 30V 1A, Diode, 2-Pin US-FLAT CUS01(TE85L,Q,M), Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 390mV, Peak Non-Repetitive Forward Surge Current: 20A

GBP 0.07

1

Toshiba 400V 700mA, Diode, 2-Pin S-FLAT CRG02(TE85L,Q,M)

Toshiba 400V 700mA, Diode, 2-Pin S-FLAT CRG02(TE85L,Q,M), Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.1V, Diode Technology: Silicon Junction, Peak Non-Repetitive Forward Surge Current: 16.5A

GBP 0.06

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

GBP 1.21

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M, Maximum Drain Source Resistance: 2.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V

GBP 1.64

1

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M, Maximum Drain Source Resistance: 0.89 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V

GBP 1.01

1

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M, Maximum Drain Source Resistance: 2.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V

GBP 1.91

1

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M, Maximum Drain Source Resistance: 0.89 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V

GBP 1.59

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M, Maximum Drain Source Resistance: 2.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V

GBP 1.04

1

Toshiba 60V 700mA, Diode, 2-Pin US-FLAT CUS04(TE85L,Q,M)

Toshiba 60V 700mA, Diode, 2-Pin US-FLAT CUS04(TE85L,Q,M), Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 580mV, Number of Elements per Chip: 1, Peak Non-Repetitive Forward Surge Current: 20A

GBP 0.25

1

Toshiba 30V 1.5A, Schottky Diode, 2-Pin S-FLAT CRS08(TE85L,Q,M)

Toshiba 30V 1.5A, Schottky Diode, 2-Pin S-FLAT CRS08(TE85L,Q,M), Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 360mV, Peak Non-Repetitive Forward Surge Current: 30 A @ 50 Hz

GBP 0.36

1

Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M

Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 155 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15mm, Length: 10mm

GBP 1.93

1

Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M

Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 155 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15mm, Length: 10mm

GBP 1.48

1

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15mm, Length: 10mm

GBP 2.26

1

Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M

Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 155 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15mm, Length: 10mm

GBP 1.93

1

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15mm, Length: 10mm

GBP 1.72

1

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15mm, Length: 10mm

GBP 1.72

1

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W5,S5VX(M

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W5,S5VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 450 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 0.96

1

Toshiba N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS TK31A60W,S4VX(M

Toshiba N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS TK31A60W,S4VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 88 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 2.66

1

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Toshiba 30V 2A, Diode, 2-Pin M-FLAT CMS06(TE12L,Q,M)

Toshiba 30V 1A, Schottky Diode, 2-Pin M-FLAT CMS10I30A

Toshiba 30V 1A, Schottky Diode, 2-Pin M-FLAT CMS10I30A

Toshiba 30V 1A, Schottky Diode, 2-Pin M-FLAT CMS10I30A

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba 30V 1A, Diode, 2-Pin US-FLAT CUS01(TE85L,Q,M)

Toshiba 400V 700mA, Diode, 2-Pin S-FLAT CRG02(TE85L,Q,M)

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 100 A, 60 V, 8-Pin SOP TPH1R306PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba 60V 700mA, Diode, 2-Pin US-FLAT CUS04(TE85L,Q,M)

Toshiba 30V 1.5A, Schottky Diode, 2-Pin S-FLAT CRS08(TE85L,Q,M)

Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M

Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M

Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M

Toshiba N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W5,S5VX(M

Toshiba N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220SIS TK31A60W,S4VX(M