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Vishay 1650V 3A, Silicon Junction Diode, 2-Pin SOD-64 BY228TAP

Vishay 1650V 3A, Silicon Junction Diode, 2-Pin SOD-64 BY228TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.5V, Peak Reverse Recovery Time: 20µs, Peak Non-Repetitive Forward Surge Current: 50A

GBP 0.82

1

Vishay 1650V 3A, Silicon Junction Diode, 2-Pin SOD-64 BY228TAP

Vishay 1650V 3A, Silicon Junction Diode, 2-Pin SOD-64 BY228TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.5V, Peak Reverse Recovery Time: 20µs, Peak Non-Repetitive Forward Surge Current: 50A

GBP 0.45

1

Vishay Zener Diode Through Hole 2-Pin SOD-64

Vishay Zener Diode Through Hole 2-Pin SOD-64, Diode Configuration: Single, Number of Elements per Chip: 1, Zener Type: Avalanche, Maximum Reverse Leakage Current: 50µA, Dimensions: 4.3 (Dia.). x 4mm, Forward Current: 3A, Forward Voltage: 1.7V, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SF5408-TR

GBP 0.77

1

Vishay Zener Diode Through Hole 2-Pin SOD-64

Vishay Zener Diode Through Hole 2-Pin SOD-64, Diode Configuration: Single, Number of Elements per Chip: 1, Zener Type: Avalanche, Maximum Reverse Leakage Current: 50µA, Dimensions: 4.3 (Dia.). x 4mm, Forward Current: 3A, Forward Voltage: 1.7V, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SF5408-TR

GBP 0.39

1

Vishay Zener Diode Through Hole 2-Pin SOD-64

Vishay Zener Diode Through Hole 2-Pin SOD-64, Diode Configuration: Single, Number of Elements per Chip: 1, Zener Type: Avalanche, Maximum Reverse Leakage Current: 50µA, Diameter: 4.3mm, Dimensions: 4.3 Dia. x 4mm, Forward Current: 3A, Forward Voltage: 1.7V, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SF5408-TR

GBP 0.73

1

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT78-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT78-TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.2V, Peak Reverse Recovery Time: 250ns, Peak Non-Repetitive Forward Surge Current: 100A

GBP 0.43

1

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT78-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT78-TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.2V, Peak Reverse Recovery Time: 250ns, Peak Non-Repetitive Forward Surge Current: 100A

GBP 0.37

1

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT56M-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT56M-TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.4V, Peak Reverse Recovery Time: 100ns, Peak Non-Repetitive Forward Surge Current: 80A

GBP 0.41

1

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT56M-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT56M-TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.4V, Peak Reverse Recovery Time: 100ns, Peak Non-Repetitive Forward Surge Current: 80A

GBP 0.56

1

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT56M-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT56M-TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.4V, Peak Reverse Recovery Time: 100ns, Peak Non-Repetitive Forward Surge Current: 80A

GBP 0.83

1

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT78-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT78-TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.2V, Peak Reverse Recovery Time: 250ns, Peak Non-Repetitive Forward Surge Current: 100A

GBP 0.79

1

Vishay 200V 3.5A, Silicon Junction Diode, 2-Pin SOD-64 BYV28-200-TAP

Vishay 200V 3.5A, Silicon Junction Diode, 2-Pin SOD-64 BYV28-200-TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.1V, Peak Reverse Recovery Time: 30ns, Peak Non-Repetitive Forward Surge Current: 90A

GBP 0.98

1

Vishay 200V 3.5A, Silicon Junction Diode, 2-Pin SOD-64 BYV28-200-TAP

Vishay 200V 3.5A, Silicon Junction Diode, 2-Pin SOD-64 BYV28-200-TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.1V, Peak Reverse Recovery Time: 30ns, Peak Non-Repetitive Forward Surge Current: 90A

GBP 0.45

1

Vishay 200V 3.5A, Silicon Junction Diode, 2-Pin SOD-64 BYV28-200-TAP

Vishay 200V 3.5A, Silicon Junction Diode, 2-Pin SOD-64 BYV28-200-TAP, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.1V, Peak Reverse Recovery Time: 30ns, Peak Non-Repetitive Forward Surge Current: 90A

GBP 0.57

1

Vishay N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK SUM90220E-GE3

Vishay N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK SUM90220E-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 23.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 1.45

1

Vishay N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK SUM90220E-GE3

Vishay N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK SUM90220E-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 23.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 2.35

1

Vishay N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK SUM90220E-GE3

Vishay N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK SUM90220E-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 23.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 2.35

1

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 47 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V, Maximum Operating Temperature: +150 °C

GBP 3.85

1

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 47 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V, Maximum Operating Temperature: +150 °C

GBP 3.85

1

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SIHG64N65E-GE3

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SIHG64N65E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 47 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V, Maximum Operating Temperature: +150 °C

GBP 3.78

1

Vishay N-Channel MOSFET, 64 A, 200 V, 3 + Tab-Pin TO-220AB SUP90220E-GE3

Vishay N-Channel MOSFET, 64 A, 200 V, 3 + Tab-Pin TO-220AB SUP90220E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 2.32

1

Vishay N-Channel MOSFET, 64 A, 200 V, 3 + Tab-Pin TO-220AB SUP90220E-GE3

Vishay N-Channel MOSFET, 64 A, 200 V, 3 + Tab-Pin TO-220AB SUP90220E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 1.98

1

Vishay 3400μF Electrolytic Capacitor 200V dc, Screw Mount - 36DX342F200CC2A

Vishay 3400μF Electrolytic Capacitor 200V dc, Screw Mount - 36DX342F200CC2A, Capacitance: 3400µF, Dimensions: 64 x 105mm, Minimum Operating Temperature: -40°C, Diameter: 64mm, Maximum Operating Temperature: +85°C, Lead Pitch: 28.6mm, Lifetime: 1000h, Tolerance: -10 → +50%

GBP 55.95

1

Vishay 81000μF Electrolytic Capacitor 40V dc, Screw Mount - 36DE813G040CD2A

Vishay 81000μF Electrolytic Capacitor 40V dc, Screw Mount - 36DE813G040CD2A, Capacitance: 81000µF, Dimensions: 64 x 117mm, Minimum Operating Temperature: -40°C, Diameter: 64mm, Maximum Operating Temperature: +95°C, Lead Pitch: 28.6mm, Lifetime: 1000h, Tolerance: -10 → +75%

GBP 49.21

1

Vishay 17000μF Electrolytic Capacitor 75V dc, Screw Mount - 36DX173G075CC2A

Vishay 17000μF Electrolytic Capacitor 75V dc, Screw Mount - 36DX173G075CC2A, Capacitance: 17000µF, Dimensions: 64 x 105mm, Minimum Operating Temperature: -40°C, Diameter: 64mm, Maximum Operating Temperature: +85°C, Lead Pitch: 28.6mm, Lifetime: 1000h, Tolerance: -10 → +75%

GBP 53.03

1

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Vishay 1650V 3A, Silicon Junction Diode, 2-Pin SOD-64 BY228TAP

Vishay 1650V 3A, Silicon Junction Diode, 2-Pin SOD-64 BY228TAP

Vishay Zener Diode Through Hole 2-Pin SOD-64

Vishay Zener Diode Through Hole 2-Pin SOD-64

Vishay Zener Diode Through Hole 2-Pin SOD-64

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT78-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT78-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT56M-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT56M-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT56M-TAP

Vishay 1000V 3A, Silicon Junction Diode, 2-Pin SOD-64 BYT78-TAP

Vishay 200V 3.5A, Silicon Junction Diode, 2-Pin SOD-64 BYV28-200-TAP

Vishay 200V 3.5A, Silicon Junction Diode, 2-Pin SOD-64 BYV28-200-TAP

Vishay 200V 3.5A, Silicon Junction Diode, 2-Pin SOD-64 BYV28-200-TAP

Vishay N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK SUM90220E-GE3

Vishay N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK SUM90220E-GE3

Vishay N-Channel MOSFET, 64 A, 200 V, 3-Pin D2PAK SUM90220E-GE3

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SiHG64N65E-GE3

Vishay N-Channel MOSFET, 64 A, 650 V, 3-Pin TO-247AC SIHG64N65E-GE3

Vishay N-Channel MOSFET, 64 A, 200 V, 3 + Tab-Pin TO-220AB SUP90220E-GE3

Vishay N-Channel MOSFET, 64 A, 200 V, 3 + Tab-Pin TO-220AB SUP90220E-GE3

Vishay 3400μF Electrolytic Capacitor 200V dc, Screw Mount - 36DX342F200CC2A

Vishay 81000μF Electrolytic Capacitor 40V dc, Screw Mount - 36DE813G040CD2A

Vishay 17000μF Electrolytic Capacitor 75V dc, Screw Mount - 36DX173G075CC2A