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onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Dimensions: 20 x 5 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.04

1

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Dimensions: 20 x 5 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.83

1

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole, Maximum Gate Emitter Voltage: ±25V, Transistor Configuration: Single, Length: 20mm, Width: 5mm, Height: 26mm, Dimensions: 20 x 5 x 26mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 5.25

1

onsemi N-Channel MOSFET, 64 A, 120 V, 8-Pin Power 56 FDMS86202

onsemi N-Channel MOSFET, 64 A, 120 V, 8-Pin Power 56 FDMS86202, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.05mm, Length: 5.1mm

GBP 1.03

1

onsemi MC14557BDWG 64-stage Surface Mount Shift Register CMOS, 16-Pin SOIC W

onsemi MC14557BDWG 64-stage Surface Mount Shift Register CMOS, 16-Pin SOIC W, Operation Mode: Serial, Minimum Operating Supply Voltage: -0.5 V, Maximum Operating Supply Voltage: 18 V, Dimensions: 10.45 x 7.6 x 2.4mm, Direction Type: Uni-Directional, Maximum Operating Temperature: 125 °C, Minimum Operating Temperature: -55 °C, Reset Type: Asynchronous

GBP 0.87

1

onsemi N-Channel MOSFET, 64 A, 120 V, 8-Pin Power 56 FDMS86202

onsemi N-Channel MOSFET, 64 A, 120 V, 8-Pin Power 56 FDMS86202, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.05mm, Length: 5.1mm

GBP 2.00

1

onsemi N-Channel MOSFET, 64 A, 120 V, 8-Pin Power 56 FDMS86202

onsemi N-Channel MOSFET, 64 A, 120 V, 8-Pin Power 56 FDMS86202, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 13.2 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.05mm, Length: 5.1mm

GBP 1.05

1

onsemi MC14557BDWG 64-stage Surface Mount Shift Register CMOS, 16-Pin SOIC W

onsemi MC14557BDWG 64-stage Surface Mount Shift Register CMOS, 16-Pin SOIC W, Operation Mode: Serial, Minimum Operating Supply Voltage: -0.5 V, Maximum Operating Supply Voltage: 18 V, Dimensions: 10.45 x 7.6 x 2.4mm, Direction Type: Uni-Directional, Maximum Operating Temperature: 125 °C, Minimum Operating Temperature: -55 °C, Reset Type: Asynchronous

GBP 0.87

1

onsemi AX8052F143-3-TX40, 16bit MCU 8052 Microcontroller, AX8052, 1.05GHz, 64 kB Flash, 40-Pin QFN

onsemi AX8052F143-3-TX40, 16bit MCU 8052 Microcontroller, AX8052, 1.05GHz, 64 kB Flash, 40-Pin QFN, Mounting Type: Surface Mount, RAM Size: 8.25 kB, Typical Operating Supply Voltage: 3 V, ADC Resolution: 10bit, ADCs: 1 (2 x 10 bit), Data Rate: 125kbit/s

GBP 3.27

1

onsemi CAT5221WI-10-T1, Digital Potentiometer 10kΩ 64-Position Linear Serial-I2C 20 Pin, SOIC

onsemi CAT5221WI-10-T1, Digital Potentiometer 10kΩ 64-Position Linear Serial-I2C 20 Pin, SOIC, Memory Type: Non-Volatile, Mounting Type: Surface Mount, Power Supply Type: Single, Typical Single Supply Voltage: 2.5 → 6 V, Dimensions: 6.6 x 4.5 x 1.05mm, Length: 6.6mm, Maximum Operating Temperature: +85 °C

GBP 2.46

1

onsemi CAT5221WI-10-T1, Digital Potentiometer 10kΩ 64-Position Linear Serial-I2C 20 Pin, SOIC

onsemi CAT5221WI-10-T1, Digital Potentiometer 10kΩ 64-Position Linear Serial-I2C 20 Pin, SOIC, Memory Type: Non-Volatile, Mounting Type: Surface Mount, Power Supply Type: Single, Typical Single Supply Voltage: 2.5 → 6 V, Dimensions: 6.6 x 4.5 x 1.05mm, Length: 6.6mm, Maximum Operating Temperature: +85 °C

GBP 2.23

1

onsemi AX8052F143-3-TX40, 16bit MCU 8052 Microcontroller, AX8052, 1.05GHz, 64 kB Flash, 40-Pin QFN

onsemi AX8052F143-3-TX40, 16bit MCU 8052 Microcontroller, AX8052, 1.05GHz, 64 kB Flash, 40-Pin QFN, Mounting Type: Surface Mount, RAM Size: 8.25 kB, Typical Operating Supply Voltage: 3 V, ADCs: 2 x 10 bit, Data Rate: 125kbit/s, Dimensions: 7 x 5 x 0.95mm

GBP 1.94

1

onsemi AX8052F143-3-TX40, 16bit MCU 8052 Microcontroller, AX8052, 1.05GHz, 64 kB Flash, 40-Pin QFN

onsemi AX8052F143-3-TX40, 16bit MCU 8052 Microcontroller, AX8052, 1.05GHz, 64 kB Flash, 40-Pin QFN, Mounting Type: Surface Mount, RAM Size: 8.25 kB, Typical Operating Supply Voltage: 3 V, ADCs: 2 x 10 bit, Data Rate: 125kbit/s, Dimensions: 7 x 5 x 0.95mm

GBP 3.85

1

onsemi, ArrayJ-60035-64P-PCB 1-Element Photodetector, Through Hole

onsemi 1-Element Photodetector, Through Hole, Element Type: Photomultiplier, Number of Pins: 64, Dimensions: 33.4 x 33.4 x 6.5mm, Length: 33.4mm, Series: J, MPN: ArrayJ-60035-64P-PCB

GBP 2617.00

1

onsemi, ArrayJ-30035-64P-PCB 1-Element Photodetector, Through Hole

onsemi 1-Element Photodetector, Through Hole, Element Type: Photomultiplier, Number of Pins: 64, Dimensions: 13.24 x 13.24 x 6.5mm, Length: 13.24mm, Series: J, MPN: ArrayJ-30035-64P-PCB

GBP 1226.73

1

onsemi N-Channel MOSFET, 4.3 A, 60 V, 6-Pin SOT-23 FDC5612

onsemi N-Channel MOSFET, 4.3 A, 60 V, 6-Pin SOT-23 FDC5612, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 3mm

GBP 0.22

1

onsemi N-Channel MOSFET, 4.3 A, 60 V, 6-Pin SOT-23 FDC5612

onsemi N-Channel MOSFET, 4.3 A, 60 V, 6-Pin SOT-23 FDC5612, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 3mm

GBP 0.46

1

onsemi N-Channel MOSFET, 4.3 A, 60 V, 6-Pin SOT-23 FDC5612

onsemi N-Channel MOSFET, 4.3 A, 60 V, 6-Pin SOT-23 FDC5612, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm, Length: 3mm

GBP 0.56

1

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 69 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.90

1

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 69 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 1.05

1

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 69 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.45

1

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 368 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 7.78

1

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 368 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 9.03

1

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 368 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.82mm, Length: 15.87mm

GBP 9.03

1

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onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

onsemi N-Channel MOSFET, 64 A, 120 V, 8-Pin Power 56 FDMS86202

onsemi MC14557BDWG 64-stage Surface Mount Shift Register CMOS, 16-Pin SOIC W

onsemi N-Channel MOSFET, 64 A, 120 V, 8-Pin Power 56 FDMS86202

onsemi N-Channel MOSFET, 64 A, 120 V, 8-Pin Power 56 FDMS86202

onsemi MC14557BDWG 64-stage Surface Mount Shift Register CMOS, 16-Pin SOIC W

onsemi AX8052F143-3-TX40, 16bit MCU 8052 Microcontroller, AX8052, 1.05GHz, 64 kB Flash, 40-Pin QFN

onsemi CAT5221WI-10-T1, Digital Potentiometer 10kΩ 64-Position Linear Serial-I2C 20 Pin, SOIC

onsemi CAT5221WI-10-T1, Digital Potentiometer 10kΩ 64-Position Linear Serial-I2C 20 Pin, SOIC

onsemi AX8052F143-3-TX40, 16bit MCU 8052 Microcontroller, AX8052, 1.05GHz, 64 kB Flash, 40-Pin QFN

onsemi AX8052F143-3-TX40, 16bit MCU 8052 Microcontroller, AX8052, 1.05GHz, 64 kB Flash, 40-Pin QFN

onsemi, ArrayJ-60035-64P-PCB 1-Element Photodetector, Through Hole

onsemi, ArrayJ-30035-64P-PCB 1-Element Photodetector, Through Hole

onsemi N-Channel MOSFET, 4.3 A, 60 V, 6-Pin SOT-23 FDC5612

onsemi N-Channel MOSFET, 4.3 A, 60 V, 6-Pin SOT-23 FDC5612

onsemi N-Channel MOSFET, 4.3 A, 60 V, 6-Pin SOT-23 FDC5612

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860

onsemi N-Channel MOSFET, 29 A, 100 V, 3-Pin DPAK FDD3860

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF

onsemi N-Channel MOSFET, 46 A, 600 V, 3-Pin TO-247 FCH47N60NF