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DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126, Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 4 (Min.) MHz, Dimensions: 8.2 x 2.9 x 11.2mm, Maximum Base Emitter Saturation Voltage: 1.4 V, Maximum Collector Emitter Saturation Voltage: 1 V

GBP 0.33
1

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126

DiodesZetex Diodes Inc APT13005SU-G1 NPN Bipolar Transistor, 3.2 A, 700 V, 3-Pin TO-126, Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 10 V, Maximum Emitter Base Voltage: 9 V, Maximum Operating Frequency: 4 (Min.) MHz, Dimensions: 8.2 x 2.9 x 11.2mm, Maximum Base Emitter Saturation Voltage: 1.4 V, Maximum Collector Emitter Saturation Voltage: 1 V

GBP 0.24
1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.21
1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.21
1

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7

DiodesZetex N-Channel MOSFET, 3.2 (State) A, 4 (Steady) A, 100 V, 6-Pin U-DFN2020 Diodes Inc DMT10H072LFDF-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.48
1

DiodesZetex AP2114D-3.3TRG1, 1 Low Noise LDO, Regulator 1 (Min)A 3-Pin, TO-252

DiodesZetex AP2114D-3.3TRG1, 1 Low Noise LDO, Regulator 1 (Min)A 3-Pin, TO-252

DiodesZetex AP2114D-3.3TRG1, 1 Low Noise LDO, Regulator 1 (Min)A 3-Pin, TO-252, Output Voltage: 3.3 V, Output Type: Fixed, Mounting Type: Surface Mount, Minimum Input Voltage: 2.5 V, Maximum Input Voltage: 6 V, Polarity: Positive, Quiescent Current: 90µA, Accuracy: ±1.5%, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +85 °C, Dimensions: 6.65 x 0.9 x 2.4 (T02522 (1)) mm, 6.7 x 6.2 x 2.38 (T02522 (3)) mm, 6.73 x 6.22 x 2.38 (T02522 (4)) mm

GBP 1.17
1