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IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 9.02

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 7.36

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 8.93

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO264P IXFK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO264P IXFK120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V

GBP 15.75

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.01

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.41

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.79

1

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.57

1

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.97

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

GBP 8.80

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

GBP 8.36

1

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.40

1

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.58

1

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 6.95

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.16mm, Length: 19.96mm

GBP 7.83

1

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.46mm, Length: 16.26mm

GBP 4.71

1

IXYS 120 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS 120 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET, Terminal Type: PCB Pin, Package Style: Small - 4 Pin, Maximum Turn On Time: 2 ms, Dimensions: 6.35 x 4.572 x 3.3mm, Capacitance: 25pF, Depth: 4.57mm, Length: 6.35mm, Off State Leakage Current: 1 μA, MPN: CPC1330GR

GBP 1.15

1

IXYS 120 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS 120 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET, Terminal Type: PCB Pin, Package Style: Small - 4 Pin, Maximum Turn On Time: 5 ms, Dimensions: 6.35 x 4.572 x 3.3mm, Capacitance: 50pF, Depth: 4.57mm, Length: 6.35mm, Off State Leakage Current: 1 μA, MPN: CPC1394GR

GBP 1.52

1

IXYS 120 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS 120 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET, Terminal Type: PCB Pin, Package Style: SOP, Maximum Turn On Time: 2 ms, Dimensions: 4.089 x 3.81 x 2.1203mm, Capacitance: 77pF, Depth: 3.81mm, Height: 2.12mm, Length: 4.09mm, Off State Leakage Current: 1 μA, MPN: CPC1025N

GBP 1.01

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXTK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXTK120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.78

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXTK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXTK120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.64

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.78

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 12.52

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 13.18

1

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXTK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXTK120N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.4V

GBP 13.19

1

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IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO264P IXFK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin PLUS247 IXTX120N65X2

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXFK120N30P3

IXYS N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXFH120N15P

IXYS 120 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS 120 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS 120 mA rms/mA dc SPNO Solid State Relay, DC, Surface Mount, MOSFET

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXTK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXTK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2

IXYS N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXTK120N65X2