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IXYS Switching Diode, 3-Pin TO-247AD DSEP60-06A

IXYS Switching Diode, 3-Pin TO-247AD DSEP60-06A, Diode Configuration: Single, Mounting Type: Through Hole, Number of Elements per Chip: 1, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 2.04V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm

GBP 5.33

1

IXYS Switching Diode, 3-Pin TO-247AD DSEP60-06A

IXYS Switching Diode, 3-Pin TO-247AD DSEP60-06A, Diode Configuration: Single, Mounting Type: Through Hole, Number of Elements per Chip: 1, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 2.04V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm

GBP 5.61

1

IXYS Switching Diode, 3-Pin TO-247AD DSEP60-06A

IXYS Switching Diode, 3-Pin TO-247AD DSEP60-06A, Diode Configuration: Single, Mounting Type: Through Hole, Number of Elements per Chip: 1, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 2.04V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C, Length: 16.26mm, Width: 5.3mm, Height: 21.46mm, Dimensions: 16.26 x 5.3 x 21.46mm

GBP 5.06

1

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 7.63

1

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 7.23

1

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 7.63

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.64

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 16mm, Length: 10.66mm

GBP 4.65

1

IXYS N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P

IXYS N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 6.28

1

IXYS N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P

IXYS N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 6.65

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.43

1

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 7.85

1

IXYS N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P

IXYS N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 49 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 6.42

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 16mm, Length: 10.66mm

GBP 4.46

1

IXYS N-Channel MOSFET, 20 A, 800 V, 3-Pin ISOPLUS247 IXFR32N80P

IXYS N-Channel MOSFET, 20 A, 800 V, 3-Pin ISOPLUS247 IXFR32N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 290 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 5.62

1

IXYS N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

IXYS N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 5.07

1

IXYS N-Channel MOSFET, 20 A, 800 V, 3-Pin ISOPLUS247 IXFR32N80P

IXYS N-Channel MOSFET, 20 A, 800 V, 3-Pin ISOPLUS247 IXFR32N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 290 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 8.66

1

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 460 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.77

1

IXYS N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

IXYS N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.67

1

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 8.54

1

IXYS N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P

IXYS N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 650 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 5.75

1

IXYS N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P

IXYS N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 49 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 6.10

1

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 460 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.49

1

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 4.54

1

IXYS N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P

IXYS N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 49 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 21.46mm, Length: 16.26mm

GBP 5.60

1

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IXYS Switching Diode, 3-Pin TO-247AD DSEP60-06A

IXYS Switching Diode, 3-Pin TO-247AD DSEP60-06A

IXYS Switching Diode, 3-Pin TO-247AD DSEP60-06A

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 70 A, 200 V, 3-Pin TO-247 IXFH70N20Q3

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P

IXYS N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P3

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-220AB IXFP26N50P3

IXYS N-Channel MOSFET, 20 A, 800 V, 3-Pin ISOPLUS247 IXFR32N80P

IXYS N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

IXYS N-Channel MOSFET, 20 A, 800 V, 3-Pin ISOPLUS247 IXFR32N80P

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P

IXYS N-Channel MOSFET, 96 A, 200 V, 3-Pin TO-247 IXFH96N20P

IXYS N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXFH88N30P

IXYS N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXFH24N80P

IXYS N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P

IXYS N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P

IXYS N-Channel MOSFET, 26 A, 500 V, 3-Pin TO-247 IXFH26N50P

IXYS N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P