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IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 8.89

1

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 9.27

1

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 68 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 7.61

1

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 13.08

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 14.09

1

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 56 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 13.49

1

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 14.85

1

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 154 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 16.18

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 23.17

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 9.02

1

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 154 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 18.55

1

IXYS N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3

IXYS N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 14.81

1

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.3 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 8.19

1

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 140 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 15.11

1

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 75 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 22.11

1

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 22.10

1

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.89 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 26.59mm, Length: 20.29mm

GBP 15.61

1

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 29.68

1

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.25 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.29

1

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 1.13 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.34mm, Length: 16.13mm

GBP 8.93

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.53

1

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.06

1

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 220 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1.56 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 26.59mm, Length: 20.29mm

GBP 23.26

1

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 85 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 1 kW, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 13.22

1

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 490 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 21.34mm, Length: 16.13mm

GBP 15.88

1

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IXYS N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3

IXYS N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3

IXYS N-Channel MOSFET, 78 A, 500 V, 3-Pin PLUS247 IXFX78N50P3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 32 A, 600 V, 3-Pin ISOPLUS247 IXFR48N60Q3

IXYS N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3

IXYS N-Channel MOSFET, 150 A, 300 V, 3-Pin PLUS247 IXFX150N30P3

IXYS N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

IXYS N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXFB82N60Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXFB210N30P3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 32 A, 1000 V, 3-Pin PLUS247 IXFX32N100Q3

IXYS N-Channel MOSFET, 120 A, 300 V, 3-Pin PLUS247 IXFX120N30P3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 24 A, 1000 V, 3-Pin PLUS247 IXFX24N100Q3

IXYS N-Channel MOSFET, 44 A, 1000 V, 3-Pin PLUS264 IXFB44N100Q3

IXYS N-Channel MOSFET, 64 A, 500 V, 3-Pin PLUS247 IXFX64N50Q3

IXYS N-Channel MOSFET, 18 A, 1000 V, 3-Pin ISOPLUS247 IXFR24N100Q3