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Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC016N03MS G

Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC016N03MS G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.49

1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC017N04NSGATMA1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC017N04NSGATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 139 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, MPN: BSC017N04NS G

GBP 1.62

1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC027N04LSGATMA1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC027N04LSGATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, MPN: BSC027N04LS G

GBP 0.85

1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC017N04NSGATMA1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC017N04NSGATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 139 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, MPN: BSC017N04NS G

GBP 1.62

1

Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1

Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm, MPN: IPP072N10N3 G

GBP 1.91

1

Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1

Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.57mm, MPN: IPP072N10N3 G

GBP 1.91

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

GBP 1.98

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

GBP 2.19

1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

GBP 1.48

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 1.54

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 1.32

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 0.96

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 1.09

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 0.98

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.6 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1.1mm, Length: 6.1mm

GBP 0.75

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 139 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.1V

GBP 2.46

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.1V

GBP 2.56

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 139 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.1V

GBP 1.24

1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Forward Diode Voltage: 1.1V

GBP 1.45

1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.004 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: OptiMOS

GBP 1.33

1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.004 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.8V, Series: OptiMOS

GBP 1.62

1

Infineon Dual N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin P/G-HSOF IAUT200N08S5N023ATMA1

GBP 4.14

1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.95mm, Length: 10.36mm

GBP 2.77

1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.95mm, Length: 10.36mm

GBP 3.28

1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.95mm, Length: 10.36mm

GBP 2.78

1

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Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC016N03MS G

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC017N04NSGATMA1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC027N04LSGATMA1

Infineon N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC017N04NSGATMA1

Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1

Infineon N-Channel MOSFET, 80 A, 100 V, 3-Pin TO-220 IPP072N10N3GXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC046N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC035N10NS5ATMA1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon Silicon N-Channel MOSFET, 100 A, 100 V, 8-Pin PG-TDSON-8 IAUC100N10S5N040ATMA1

Infineon Dual N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin P/G-HSOF IAUT200N08S5N023ATMA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1

Infineon N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1