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Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin PG-SOT23-3 BSS138IXTSA1

GBP 0.03

1

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin PG-SOT23-3 BSS138IXTSA1

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin PG-SOT23-3 BSS138IXTSA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 1.4V

GBP 0.04

1

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin PG-SOT23-3 BSS138IXTSA1

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin PG-SOT23-3 BSS138IXTSA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 1.4V

GBP 0.03

1

Infineon N-Channel MOSFET, 230 A, 75 V, 3-Pin D2PAK IRFS3107PBF

Infineon N-Channel MOSFET, 230 A, 75 V, 3-Pin D2PAK IRFS3107PBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 370 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 4.83mm

GBP 3.40

1

Infineon N-Channel MOSFET, 230 A, 75 V, 3-Pin D2PAK IRFS3107PBF

Infineon N-Channel MOSFET, 230 A, 75 V, 3-Pin D2PAK IRFS3107PBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 370 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm

GBP 4.05

1

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6327XTSA2

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6327XTSA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.09

1

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6433XTMA1

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6433XTMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.11

1

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6327XTSA2

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6327XTSA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.05

1

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6433XTMA1

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6433XTMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.05

1

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.51

1

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 Ω, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.26

1

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 230 W

GBP 2.70

1

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3, Maximum Gate Emitter Voltage: ±20 V, ±30 V, Maximum Power Dissipation: 230 W

GBP 2.40

1

Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Switching Speed: 60kHz, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm

GBP 2.96

1

Infineon BFP460H6327XTSA1 NPN Transistor, 70 mA, 15 V, 4-Pin SOT-343

Infineon BFP460H6327XTSA1 NPN Transistor, 70 mA, 15 V, 4-Pin SOT-343, Mounting Type: Surface Mount, Maximum Power Dissipation: 230 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 1.5 V, Dimensions: 2 x 1.25 x 0.8mm, Maximum Operating Temperature: +150 °C

GBP 0.13

1

Infineon BFP460H6327XTSA1 NPN Transistor, 70 mA, 15 V, 4-Pin SOT-343

Infineon BFP460H6327XTSA1 NPN Transistor, 70 mA, 15 V, 4-Pin SOT-343, Mounting Type: Surface Mount, Maximum Power Dissipation: 230 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 1.5 V, Dimensions: 2 x 1.25 x 0.8mm, Maximum Operating Temperature: +150 °C

GBP 0.37

1

Infineon BFP460H6327XTSA1 NPN Transistor, 70 mA, 15 V, 4-Pin SOT-343

Infineon BFP460H6327XTSA1 NPN Transistor, 70 mA, 15 V, 4-Pin SOT-343, Mounting Type: Surface Mount, Maximum Power Dissipation: 230 mW, Minimum DC Current Gain: 90, Transistor Configuration: Single, Maximum Emitter Base Voltage: 1.5 V, Dimensions: 2 x 1.25 x 0.8mm, Length: 2mm

GBP 0.37

1

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Length: 16.13mm, Width: 5.21mm, Height: 21.1mm, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.91mJ, Gate Capacitance: 4740pF

GBP 2.96

1

Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Switching Speed: 60kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 0.93mJ, Gate Capacitance: 4755pF, Maximum Operating Temperature: +175 °C

GBP 2.96

1

Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Switching Speed: 60kHz, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 0.93mJ, Gate Capacitance: 4755pF, Maximum Operating Temperature: +175 °C

GBP 2.18

1

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.91mJ, Gate Capacitance: 4740pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.51

1

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Dimensions: 16.13 x 5.21 x 21.1mm, Energy Rating: 1.91mJ, Gate Capacitance: 4740pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.96

1

Infineon N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRFB4410ZGPBF

Infineon N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRFB4410ZGPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 16.51mm, Length: 10.67mm

GBP 1.93

1

Infineon N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRFB4410ZGPBF

Infineon N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRFB4410ZGPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 16.51mm, Length: 10.67mm

GBP 2.03

1

Infineon N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRFB4410ZGPBF

Infineon N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRFB4410ZGPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 16.51mm, Length: 10.67mm

GBP 2.28

1

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Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin PG-SOT23-3 BSS138IXTSA1

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin PG-SOT23-3 BSS138IXTSA1

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin PG-SOT23-3 BSS138IXTSA1

Infineon N-Channel MOSFET, 230 A, 75 V, 3-Pin D2PAK IRFS3107PBF

Infineon N-Channel MOSFET, 230 A, 75 V, 3-Pin D2PAK IRFS3107PBF

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6327XTSA2

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6433XTMA1

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6327XTSA2

Infineon N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 BSS138NH6433XTMA1

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2

Infineon N-Channel MOSFET, 230 mA, 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon BFP460H6327XTSA1 NPN Transistor, 70 mA, 15 V, 4-Pin SOT-343

Infineon BFP460H6327XTSA1 NPN Transistor, 70 mA, 15 V, 4-Pin SOT-343

Infineon BFP460H6327XTSA1 NPN Transistor, 70 mA, 15 V, 4-Pin SOT-343

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon IKW40N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

Infineon N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRFB4410ZGPBF

Infineon N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRFB4410ZGPBF

Infineon N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220 IRFB4410ZGPBF