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Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF

GBP 2.14

1

Infineon 32bit ARM Cortex M0 Microcontroller, XMC1000, 48MHz, 128 kB Flash, 48-Pin VQFN

Infineon 32bit ARM Cortex M0 Microcontroller, XMC1000, 48MHz, 128 kB Flash, 48-Pin VQFN, MPN: XMC1402Q048X0128AAXUMA1

GBP 1.78

1

Infineon 32bit ARM Cortex M0 Microcontroller, XMC1000, 48MHz, 128 kB Flash, 48-Pin VQFN

Infineon 32bit ARM Cortex M0 Microcontroller, XMC1000, 48MHz, 128 kB Flash, 48-Pin VQFN, Mounting Type: Surface Mount, MPN: XMC1402Q048X0128AAXUMA1

GBP 1.53

1

Infineon 32bit ARM Cortex M0 Microcontroller, XMC1000, 48MHz, 128 kB Flash, 48-Pin VQFN

Infineon 32bit ARM Cortex M0 Microcontroller, XMC1000, 48MHz, 128 kB Flash, 48-Pin VQFN, Mounting Type: Surface Mount, MPN: XMC1402Q048X0128AAXUMA1

GBP 1.94

1

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0058 Ω, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 1.54

1

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0058 Ω, Maximum Gate Threshold Voltage: 4V, Series: HEXFET

GBP 2.33

1

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 4.83mm

GBP 1.54

1

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 4.83mm

GBP 2.60

1

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 230 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.3V, Height: 4.83mm

GBP 2.60

1

Infineon P-Channel MOSFET, 4.3 A, 12 V, 3-Pin Micro IRLML6401TRPBF

Infineon P-Channel MOSFET, 4.3 A, 12 V, 3-Pin Micro IRLML6401TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.02mm

GBP 0.11

1

Infineon P-Channel MOSFET, 4.3 A, 12 V, 3-Pin Micro IRLML6401TRPBF

Infineon P-Channel MOSFET, 4.3 A, 12 V, 3-Pin Micro IRLML6401TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.02mm

GBP 0.37

1

Infineon P-Channel MOSFET, 4.3 A, 12 V, 3-Pin Micro IRLML6401TRPBF

Infineon P-Channel MOSFET, 4.3 A, 12 V, 3-Pin Micro IRLML6401TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.95V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.02mm

GBP 0.35

1

Infineon P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

Infineon P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.95mm

GBP 1.47

1

Infineon P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

Infineon P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.95mm

GBP 1.24

1

Infineon P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

Infineon P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.35V

GBP 0.64

1

Infineon P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

Infineon P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.35V

GBP 1.12

1

Infineon P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

Infineon P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.35V

GBP 1.12

1

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Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF

Infineon 32bit ARM Cortex M0 Microcontroller, XMC1000, 48MHz, 128 kB Flash, 48-Pin VQFN

Infineon 32bit ARM Cortex M0 Microcontroller, XMC1000, 48MHz, 128 kB Flash, 48-Pin VQFN

Infineon 32bit ARM Cortex M0 Microcontroller, XMC1000, 48MHz, 128 kB Flash, 48-Pin VQFN

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF

Infineon N-Channel MOSFET, 128 A, 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF

Infineon P-Channel MOSFET, 4.3 A, 12 V, 3-Pin Micro IRLML6401TRPBF

Infineon P-Channel MOSFET, 4.3 A, 12 V, 3-Pin Micro IRLML6401TRPBF

Infineon P-Channel MOSFET, 4.3 A, 12 V, 3-Pin Micro IRLML6401TRPBF

Infineon P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

Infineon P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

Infineon P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

Infineon P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

Infineon P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1