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Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1

GBP 124.24

1

Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1

Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 5.15V

GBP 99.39

1

Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1

Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 5.15V

GBP 135.54

1

Infineon N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B70BPSA1

GBP 131.35

1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

GBP 129.25

1

Infineon N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B70BPSA1

Infineon N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B70BPSA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 5.55V

GBP 124.98

1

Infineon N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B70BPSA1

Infineon N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B70BPSA1, Mounting Type: Surface Mount, Maximum Gate Threshold Voltage: 5.55V

GBP 143.29

1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 141.79

1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 141.00

1

Infineon FS75R12KE3GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO3, PCB Mount

Infineon FS75R12KE3GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO3, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 355 W, Switching Speed: 1MHz, Dimensions: 122 x 62 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 114.57

1

Infineon FS75R12KE3GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V, 35-Pin Econo3, PCB Mount

Infineon FS75R12KE3GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V, 35-Pin Econo3, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 355 W, Switching Speed: 1MHz, Dimensions: 122 x 62 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 103.28

1

Infineon FS100R12KT4GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V AG-ECONO3-4, Panel Mount

Infineon FS100R12KT4GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V AG-ECONO3-4, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 515 W, Dimensions: 122 x 62 x 17mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 62mm

GBP 127.06

1

Infineon FS100R12KT4GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V AG-ECONO3-4, Panel Mount

Infineon FS100R12KT4GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V AG-ECONO3-4, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 515 W, Dimensions: 122 x 62 x 17mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 62mm

GBP 127.06

1

Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount

Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 1MHz, Dimensions: 107.5 x 45 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, MPN: F4-75R12KS4_B11

GBP 106.38

1

Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount

Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 500 W, Switching Speed: 1MHz, Dimensions: 107.5 x 45 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, MPN: F4-75R12KS4_B11

GBP 106.75

1

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Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1

Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1

Infineon MOSFET Module, 100 A, 1200 V TRAY F3L11MR12W2M1B74BOMA1

Infineon N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B70BPSA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B70BPSA1

Infineon N-Channel MOSFET Module, 100 A, 1200 V AG-EASY1B FF11MR12W1M1B70BPSA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon FS75R12KE3GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO3, PCB Mount

Infineon FS75R12KE3GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V, 35-Pin Econo3, PCB Mount

Infineon FS100R12KT4GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V AG-ECONO3-4, Panel Mount

Infineon FS100R12KT4GBOSA1 3 Phase Bridge IGBT Module, 100 A 1200 V AG-ECONO3-4, Panel Mount

Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount

Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount