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Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

GBP 209.39

1

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

GBP 304.55

1

Infineon IFF600B12ME4PB11BPSA1 Dual IGBT Module, 600 A 1200 V ECONOD

GBP 207.82

1

Infineon IFF600B12ME4PB11BPSA1 Dual IGBT Module, 600 A 1200 V ECONOD

Infineon IFF600B12ME4PB11BPSA1 Dual IGBT Module, 600 A 1200 V ECONOD, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 226.70

1

Infineon IFF600B12ME4PB11BPSA1 Dual IGBT Module, 600 A 1200 V ECONOD

Infineon IFF600B12ME4PB11BPSA1 Dual IGBT Module, 600 A 1200 V ECONOD, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 223.64

1

Infineon FF400R17KE4HOSA1 Dual IGBT Module, 400 A 1700 V, 7-Pin 62 mm

GBP 184.04

1

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

GBP 332.23

1

Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 1.2 kW, Transistor Configuration: Common Emitter

GBP 203.05

1

Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 1.2 kW, Transistor Configuration: Common Emitter

GBP 228.43

1

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW, Transistor Configuration: Common Emitter

GBP 295.32

1

Infineon 1200V 600A, Dual Silicon Junction Diode, 3-Pin DD600N12KHPSA2

Infineon 1200V 600A, Dual Silicon Junction Diode, 3-Pin DD600N12KHPSA2, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.32V, Peak Non-Repetitive Forward Surge Current: 22kA

GBP 237.36

1

Infineon 1600V 600A, Dual Silicon Junction Diode, 3-Pin DD600N16KHPSA3

Infineon 1600V 600A, Dual Silicon Junction Diode, 3-Pin DD600N16KHPSA3, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.32V, Peak Non-Repetitive Forward Surge Current: 22kA

GBP 232.53

1

Infineon 1600V 600A, Dual Silicon Junction Diode, 3-Pin DD600N16KHPSA3

Infineon 1600V 600A, Dual Silicon Junction Diode, 3-Pin DD600N16KHPSA3, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.32V, Peak Non-Repetitive Forward Surge Current: 22kA

GBP 232.53

1

Infineon 1200V 600A, Dual Silicon Junction Diode, 3-Pin DD600N12KHPSA2

Infineon 1200V 600A, Dual Silicon Junction Diode, 3-Pin DD600N12KHPSA2, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.32V, Peak Non-Repetitive Forward Surge Current: 22kA

GBP 237.36

1

Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL

Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 190.66

1

Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL

Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 191.04

1

Infineon FF400R17KE4HOSA1 Dual IGBT Module, 400 A 1700 V, 7-Pin 62 mm

Infineon FF400R17KE4HOSA1 Dual IGBT Module, 400 A 1700 V, 7-Pin 62 mm, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 198.01

1

Infineon FF400R17KE4HOSA1 Dual IGBT Module, 400 A 1700 V, 7-Pin 62 mm

Infineon FF400R17KE4HOSA1 Dual IGBT Module, 400 A 1700 V, 7-Pin 62 mm, Maximum Gate Emitter Voltage: 20V, Maximum Power Dissipation: 20 mW

GBP 200.76

1

Infineon Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B / Module FF6MR12W2M1B11BOMA1

Infineon Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B™/ Module FF6MR12W2M1B11BOMA1, Maximum Drain Source Resistance: 0.00825 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.55V, Series: CoolSiC

GBP 235.12

1

Infineon Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B / Module FF6MR12W2M1B11BOMA1

Infineon Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B™/ Module FF6MR12W2M1B11BOMA1, Maximum Drain Source Resistance: 0.00825 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.55V, Series: CoolSiC

GBP 261.29

1

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Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

Infineon IFF600B12ME4PB11BPSA1 Dual IGBT Module, 600 A 1200 V ECONOD

Infineon IFF600B12ME4PB11BPSA1 Dual IGBT Module, 600 A 1200 V ECONOD

Infineon IFF600B12ME4PB11BPSA1 Dual IGBT Module, 600 A 1200 V ECONOD

Infineon FF400R17KE4HOSA1 Dual IGBT Module, 400 A 1700 V, 7-Pin 62 mm

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

Infineon 1200V 600A, Dual Silicon Junction Diode, 3-Pin DD600N12KHPSA2

Infineon 1600V 600A, Dual Silicon Junction Diode, 3-Pin DD600N16KHPSA3

Infineon 1600V 600A, Dual Silicon Junction Diode, 3-Pin DD600N16KHPSA3

Infineon 1200V 600A, Dual Silicon Junction Diode, 3-Pin DD600N12KHPSA2

Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL

Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL

Infineon FF400R17KE4HOSA1 Dual IGBT Module, 400 A 1700 V, 7-Pin 62 mm

Infineon FF400R17KE4HOSA1 Dual IGBT Module, 400 A 1700 V, 7-Pin 62 mm

Infineon Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B / Module FF6MR12W2M1B11BOMA1

Infineon Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B / Module FF6MR12W2M1B11BOMA1