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Infineon FS50R12KE3BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V AG-ECONO2-6, Panel Mount

Infineon FS50R12KE3BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V AG-ECONO2-6, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 270 W, Dimensions: 93 x 45 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Width: 45mm

GBP 71.52

1

Infineon FS50R12KE3BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V AG-ECONO2-6, Panel Mount

Infineon FS50R12KE3BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V AG-ECONO2-6, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 270 W, Dimensions: 93 x 45 x 17mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Width: 45mm

GBP 71.52

1

Infineon FZ300R12KE3GHOSA1 Single IGBT Module, 480 A 1200 V, 5-Pin 62MM Module, Panel Mount

Infineon FZ300R12KE3GHOSA1 Single IGBT Module, 480 A 1200 V, 5-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1450 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 36.5mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 85.28

1

Infineon FZ400R12KE3HOSA1 Single IGBT Module, 650 A 1200 V, 5-Pin 62MM Module, Panel Mount

Infineon FZ400R12KE3HOSA1 Single IGBT Module, 650 A 1200 V, 5-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 2.25 kW, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 36.5mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 86.17

1

Infineon FZ300R12KE3GHOSA1 Single IGBT Module, 480 A 1200 V, 5-Pin 62MM Module, Panel Mount

Infineon FZ300R12KE3GHOSA1 Single IGBT Module, 480 A 1200 V, 5-Pin 62MM Module, Panel Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 1450 W, Switching Speed: 1MHz, Dimensions: 106.4 x 61.4 x 36.5mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 76.44

1

Infineon 1600V 104A, Silicon Junction Diode, 2-Pin ND104N16KHPSA1

Infineon 1600V 104A, Silicon Junction Diode, 2-Pin ND104N16KHPSA1, Mounting Type: Surface Mount, Diode Configuration: Single, Maximum Forward Voltage Drop: 1.4V, Peak Non-Repetitive Forward Surge Current: 2.9kA

GBP 85.62

1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

GBP 68.31

1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.066 Ω, Maximum Gate Threshold Voltage: 20V, Series: CoolSiC

GBP 74.51

1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.066 Ω, Maximum Gate Threshold Voltage: 20V, Series: CoolSiC

GBP 66.84

1

Infineon 1600V 390A, Dual Diode, Eco Block DD390N16SHPSA1

Infineon 1600V 390A, Dual Diode, Eco Block DD390N16SHPSA1, Mounting Type: Screw Mount, Number of Elements per Chip: 2

GBP 53.60

1

Infineon 1600V 390A, Dual Diode, Eco Block DD390N16SHPSA1

Infineon 1600V 390A, Dual Diode, Eco Block DD390N16SHPSA1, Mounting Type: Screw Mount, Number of Elements per Chip: 2

GBP 53.60

1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin ND89N16KHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin ND89N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.5V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.8kA

GBP 50.18

1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.5V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.8kA

GBP 83.31

1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin ND89N16KHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin ND89N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.5V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.8kA

GBP 51.02

1

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Infineon FS50R12KE3BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V AG-ECONO2-6, Panel Mount

Infineon FS50R12KE3BOSA1 3 Phase Bridge IGBT Module, 75 A 1200 V AG-ECONO2-6, Panel Mount

Infineon FZ300R12KE3GHOSA1 Single IGBT Module, 480 A 1200 V, 5-Pin 62MM Module, Panel Mount

Infineon FZ400R12KE3HOSA1 Single IGBT Module, 650 A 1200 V, 5-Pin 62MM Module, Panel Mount

Infineon FZ300R12KE3GHOSA1 Single IGBT Module, 480 A 1200 V, 5-Pin 62MM Module, Panel Mount

Infineon 1600V 104A, Silicon Junction Diode, 2-Pin ND104N16KHPSA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon Hex N-Channel MOSFET Module, 25 A, 1200 V AG-EASY2BM-2 DF23MR12W1M1B11BPSA1

Infineon 1600V 390A, Dual Diode, Eco Block DD390N16SHPSA1

Infineon 1600V 390A, Dual Diode, Eco Block DD390N16SHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin ND89N16KHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin ND89N16KHPSA1