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Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB56ENZ

Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB56ENZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 87 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 0.36mm

GBP 0.28

1

Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB56ENZ

Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB56ENZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 87 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 0.36mm

GBP 0.08

1

Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB56ENZ

Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB56ENZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 87 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 20 V, Height: 0.36mm

GBP 0.28

1

Nexperia, 8.2V Zener Diode 2% 550 mW SMT 2-Pin SOD-323F

Nexperia, 8.2V Zener Diode 2% 550 mW SMT 2-Pin SOD-323F, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Zener Type: General Purpose, Test Current: 5mA, Maximum Reverse Leakage Current: 700nA, Dimensions: 1.8 x 1.35 x 0.8mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C, Typical Voltage Temperature Coefficient: 3.2 → 6.2mV/K, MPN: BZX84J-B8V2,115

GBP 0.10

1

Nexperia, 8.2V Zener Diode 2% 550 mW SMT 2-Pin SOD-323F

Nexperia, 8.2V Zener Diode 2% 550 mW SMT 2-Pin SOD-323F, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Zener Type: General Purpose, Test Current: 5mA, Maximum Reverse Leakage Current: 700nA, Dimensions: 1.8 x 1.35 x 0.8mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C, Typical Voltage Temperature Coefficient: 3.2 → 6.2mV/K, MPN: BZX84J-B8V2,115

GBP 0.04

1

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.27

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 121 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.11

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 121 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.25

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.18

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.15

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.25

1

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.06

1

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 121 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.9V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 8.33 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.08

1

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: -1V, Minimum Gate Threshold Voltage: -0.4V, Maximum Power Dissipation: 8330 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: 8 V, Height: 0.36mm

GBP 0.17

1

Nexperia, 8.2V Zener Diode 5% 550 mW SMT 2-Pin SOD-323F

Nexperia, 8.2V Zener Diode 5% 550 mW SMT 2-Pin SOD-323F, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Zener Type: General Purpose, Test Current: 5mA, Maximum Reverse Leakage Current: 700nA, Dimensions: 1.8 x 1.35 x 0.8mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C, Typical Voltage Temperature Coefficient: 3.2 → 6.2mV/K, MPN: BZX84J-C8V2,115

GBP 0.04

1

Nexperia, 8.2V Zener Diode 5% 550 mW SMT 2-Pin SOD-323F

Nexperia, 8.2V Zener Diode 5% 550 mW SMT 2-Pin SOD-323F, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Zener Type: General Purpose, Test Current: 5mA, Maximum Reverse Leakage Current: 700nA, Dimensions: 1.8 x 1.35 x 0.8mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C, Typical Voltage Temperature Coefficient: 3.2 → 6.2mV/K, MPN: BZX84J-C8V2,115

GBP 0.08

1

Nexperia 30V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG3010AESBYL

Nexperia 30V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG3010AESBYL, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Reverse Recovery Time: 3.5ns

GBP 0.04

1

Nexperia 60V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG6010AESBYL

Nexperia 60V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG6010AESBYL, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Reverse Recovery Time: 2.4ns

GBP 0.09

1

Nexperia 40V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG4010AESBYL

Nexperia 40V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG4010AESBYL, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Reverse Recovery Time: 3.1ns

GBP 0.12

1

Nexperia 30V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG3010AESBYL

Nexperia 30V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG3010AESBYL, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Reverse Recovery Time: 3.5ns

GBP 0.21

1

Nexperia 30V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG3010AESBYL

Nexperia 30V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG3010AESBYL, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Reverse Recovery Time: 3.5ns

GBP 0.09

1

Nexperia 60V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG6010AESBYL

Nexperia 60V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG6010AESBYL, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Reverse Recovery Time: 2.4ns

GBP 0.05

1

Nexperia 40V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG4010AESBYL

Nexperia 40V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG4010AESBYL, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Reverse Recovery Time: 3.1ns

GBP 0.21

1

Nexperia 60V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG6010AESBYL

Nexperia 60V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG6010AESBYL, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Reverse Recovery Time: 2.4ns

GBP 0.23

1

Nexperia 40V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG4010AESBYL

Nexperia 40V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG4010AESBYL, Mounting Type: Surface Mount, Diode Configuration: Single, Rectifier Type: Schottky Rectifier, Peak Reverse Recovery Time: 3.1ns

GBP 0.04

1

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Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB56ENZ

Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB56ENZ

Nexperia N-Channel MOSFET, 3.2 A, 30 V, 4-Pin DFN1010D-3, SOT1215 PMXB56ENZ

Nexperia, 8.2V Zener Diode 2% 550 mW SMT 2-Pin SOD-323F

Nexperia, 8.2V Zener Diode 2% 550 mW SMT 2-Pin SOD-323F

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB43UNEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia 3 N-Channel MOSFET, 3.2 A, 12 V, 4-Pin DFN1010D-3, SOT1215 PMXB40UNEZ

Nexperia 3 P-Channel MOSFET, -3.2 A, -12 V, 4-Pin DFN1010D-3, SOT1215 PMXB65UPEZ

Nexperia, 8.2V Zener Diode 5% 550 mW SMT 2-Pin SOD-323F

Nexperia, 8.2V Zener Diode 5% 550 mW SMT 2-Pin SOD-323F

Nexperia 30V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG3010AESBYL

Nexperia 60V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG6010AESBYL

Nexperia 40V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG4010AESBYL

Nexperia 30V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG3010AESBYL

Nexperia 30V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG3010AESBYL

Nexperia 60V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG6010AESBYL

Nexperia 40V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG4010AESBYL

Nexperia 60V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG6010AESBYL

Nexperia 40V 1.4A, Schottky Diode, 2-Pin DSN-1006-2 PMEG4010AESBYL