ROHM N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK RJ1P12BBDTLL
ROHM N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK RJ1P12BBDTLL, Package Type: TO-263AB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 178 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V