ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520KNX
ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520KNX, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V