ROHM RGW00TK65GVC11 IGBT, 26 A 1.5 V, 3-Pin TO-3PFM, Through Hole
ROHM RGW00TK65GVC11 IGBT, 26 A 1.5 V, 3-Pin TO-3PFM, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 89 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 4200pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C