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ROHM 65V 10A, Dual Schottky Diode, 3-Pin SC-63 RBQ10B65ATL

ROHM 65V 10A, Dual Schottky Diode, 3-Pin SC-63 RBQ10B65ATL, Mounting Type: Surface Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 690mV, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 50A

GBP 62.28

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 3-Pin TO-247N SCT3030ALGC11

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 3-Pin TO-247N SCT3030ALGC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 39.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.6V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 339 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 22 V, Height: 21mm

GBP 45.32

ROHM SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N SCT3040KLGC11

ROHM SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N SCT3040KLGC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.6V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 22 V, Height: 21mm

GBP 47.92

ROHM SiC N-Channel MOSFET, 72 A, 1200 V, 3-Pin TO-247N SCT3030KLGC11

ROHM SiC N-Channel MOSFET, 72 A, 1200 V, 3-Pin TO-247N SCT3030KLGC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.6V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 262 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 22 V, Height: 21mm

GBP 50.03

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ROHM 65V 10A, Dual Schottky Diode, 3-Pin SC-63 RBQ10B65ATL

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 3-Pin TO-247N SCT3030ALGC11

ROHM SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N SCT3040KLGC11

ROHM SiC N-Channel MOSFET, 72 A, 1200 V, 3-Pin TO-247N SCT3030KLGC11