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STMicroelectronics SMP100LC-230, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-230, Bi-Directional TVS Diode, 2-Pin DO-214AA, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AA (SMB), Maximum Reverse Stand-off Voltage: 207V, Maximum Peak Pulse Current: 150A, ESD Protection: Yes, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Capacitance: 60pF, Dimensions: 4.6 x 2.2 x 2.45mm, Length: 4.6mm

GBP 0.75

1

STMicroelectronics SMP100LC-230, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-230, Bi-Directional TVS Diode, 2-Pin DO-214AA, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AA (SMB), Maximum Reverse Stand-off Voltage: 207V, Maximum Peak Pulse Current: 150A, ESD Protection: Yes, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Capacitance: 60pF, Dimensions: 4.6 x 2.2 x 2.45mm, Length: 4.6mm

GBP 0.41

1

STMicroelectronics SMP100LC-230, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-230, Bi-Directional TVS Diode, 2-Pin DO-214AA, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AA (SMB), Maximum Reverse Stand-off Voltage: 207V, Maximum Peak Pulse Current: 150A, ESD Protection: Yes, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Capacitance: 60pF, Dimensions: 4.6 x 2.2 x 2.45mm, Length: 4.6mm

GBP 0.80

1

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220, Maximum Emitter Base Voltage: 20 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Base Voltage: 2000 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm

GBP 6.97

1

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220, Maximum Emitter Base Voltage: 20 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Base Voltage: 2000 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm

GBP 6.79

1

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220, Maximum Emitter Base Voltage: 20 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Base Voltage: 2000 V, Maximum Collector Cut-off Current: 100µA, Dimensions: 10.4 x 4.6 x 15.75mm

GBP 8.07

1

STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247

STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Number of Transistors: 1, Transistor Configuration: Common Emitter

GBP 3.08

1

STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247

STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 230 W, Number of Transistors: 1, Transistor Configuration: Common Emitter

GBP 2.64

1

STMicroelectronics L78L10ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics L78L10ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89, Output Voltage: 10 V, Line Regulation: 230 mV, Accuracy: ±5%, Load Regulation: 80 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 6mA, Output Type: Fixed, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.32

1

STMicroelectronics L78L10ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics L78L10ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89, Output Voltage: 10 V, Line Regulation: 230 mV, Accuracy: ±5%, Load Regulation: 80 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 6mA, Output Type: Fixed, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.14

1

STMicroelectronics L78L10ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics L78L10ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89, Output Voltage: 10 V, Output Type: Fixed, Mounting Type: Surface Mount, Minimum Operating Temperature: 0 °C, Maximum Operating Temperature: +150 °C, Polarity: Positive, Accuracy: ±5%, Dimensions: 4.6 x 2.6 x 1.6mm, Length: 4.6mm, Line Regulation: 230 mV

GBP 0.30

1

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.38 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 4.57

1

STMicroelectronics N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z

STMicroelectronics N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 4.64

1

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.38 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 5.39

1

STMicroelectronics N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z

STMicroelectronics N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 5.46

1

STMicroelectronics N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z

STMicroelectronics N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 4.63

1

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.38 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 4.58

1

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STMicroelectronics SMP100LC-230, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-230, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-230, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STP03D200 NPN Darlington Transistor, 100 mA 1200 V HFE:230 @ 20 mA @ 10 V, 3-Pin TO-220

STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247

STMicroelectronics STGWA40H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247

STMicroelectronics L78L10ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics L78L10ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics L78L10ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z

STMicroelectronics N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z

STMicroelectronics N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z

STMicroelectronics N-Channel MOSFET, 8.3 A, 1000 V, 3-Pin TO-247 STW11NK100Z