STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip247 SCT30N120
STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip247 SCT30N120, Mounting Type: Through Hole, Maximum Drain Source Resistance: 100 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 270 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +25 V, Forward Diode Voltage: 3.5V, Height: 20.15mm, Length: 15.75mm