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STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

GBP 9.10

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

GBP 14.12

1

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN, Processing Unit: Bluetooth, Mounting Type: Surface Mount, Dimensions: 8.15 x 8.15 x 0.95mm, Length: 8.15mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.71 V, Minimum Operating Temperature: -40 °C

GBP 6.21

1

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN, Processing Unit: Bluetooth, Mounting Type: Surface Mount, Dimensions: 8.15 x 8.15 x 0.95mm, Length: 8.15mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.71 V, Minimum Operating Temperature: -40 °C

GBP 8.69

1

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN, Processing Unit: Bluetooth, Mounting Type: Surface Mount, Dimensions: 8.15 x 8.15 x 0.95mm, Length: 8.15mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 1.71 V, Minimum Operating Temperature: -40 °C

GBP 8.17

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 Long Leeds STWA70N65DM6

GBP 10.77

1

STMicroelectronics SMP50-68, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-68, Bi-Directional TVS Diode, 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Stand-off Voltage: 68V, Maximum Peak Pulse Current: 50A, Maximum Operating Temperature: +150 °C, Dimensions: 4.6 x 2.9 x 2.45mm, Length: 4.6mm, Maximum Reverse Leakage Current: 5µA, Width: 2.9mm

GBP 0.56

1

STMicroelectronics SMP50-68, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-68, Bi-Directional TVS Diode, 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Stand-off Voltage: 68V, Maximum Peak Pulse Current: 50A, Maximum Operating Temperature: +150 °C, Dimensions: 4.6 x 2.9 x 2.45mm, Length: 4.6mm, Maximum Reverse Leakage Current: 5µA, Width: 2.9mm

GBP 0.26

1

STMicroelectronics SMP50-68, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-68, Bi-Directional TVS Diode, 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Stand-off Voltage: 68V, Maximum Peak Pulse Current: 50A, Maximum Operating Temperature: +150 °C, Dimensions: 4.6 x 2.9 x 2.45mm, Length: 4.6mm, Maximum Reverse Leakage Current: 5µA, Width: 2.9mm

GBP 0.59

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.23

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 10.55

1

STMicroelectronics BZW50-68, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-68, Uni-Directional TVS Diode, 5000W, 2-Pin R 6, Diode Configuration: Single, Maximum Clamping Voltage: 157V, Minimum Breakdown Voltage: 75.6V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 68V, Maximum Peak Pulse Current: 382A, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 9.1 x 9.1 x 9.1mm

GBP 0.68

1

STMicroelectronics BZW50-68, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-68, Uni-Directional TVS Diode, 5000W, 2-Pin R 6, Diode Configuration: Single, Maximum Clamping Voltage: 157V, Minimum Breakdown Voltage: 75.6V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 68V, Maximum Peak Pulse Current: 382A, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 9.1 x 9.1 x 9.1mm

GBP 0.68

1

STMicroelectronics BZW50-68, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-68, Uni-Directional TVS Diode, 5000W, 2-Pin R 6, Diode Configuration: Single, Maximum Clamping Voltage: 157V, Minimum Breakdown Voltage: 75.6V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 68V, Maximum Peak Pulse Current: 382A, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 9.1 x 9.1 x 9.1mm

GBP 0.66

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 7.68

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 14.39

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 Long Leeds STWA70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 Long Leeds STWA70N65DM6, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 10.98

1

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 Long Leeds STWA70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 Long Leeds STWA70N65DM6, Maximum Drain Source Resistance: 0.036 Ω, Maximum Gate Threshold Voltage: 4.75V, Number of Elements per Chip: 1

GBP 9.68

1

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 450 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 9.16

1

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 450 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 10.65

1

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 450 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 9.20

1

STMicroelectronics SMA6F28A, Uni-Directional TVS Diode, 600W, 2-Pin SMA Flat

STMicroelectronics SMA6F28A, Uni-Directional TVS Diode, 600W, 2-Pin SMA Flat, Diode Configuration: Single, Maximum Clamping Voltage: 45.4 V, 59 V, Minimum Breakdown Voltage: 31.1V, Mounting Type: Surface Mount, Maximum Reverse Stand-off Voltage: 28V, Maximum Peak Pulse Current: 13.8 A, 68 A, ESD Protection: Yes, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C, Capacitance: 150pF

GBP 0.23

1

STMicroelectronics SMA6F28AY, Uni-Directional TVS Diode, 600W, 2-Pin SMA Flat

STMicroelectronics SMA6F28AY, Uni-Directional TVS Diode, 600W, 2-Pin SMA Flat, Diode Configuration: Single, Maximum Clamping Voltage: 45.4 V, 59 V, Minimum Breakdown Voltage: 31.1V, Mounting Type: Surface Mount, Maximum Reverse Stand-off Voltage: 28V, Maximum Peak Pulse Current: 13.8 A, 68 A, ESD Protection: Yes, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C, Automotive Standard: AEC-Q101

GBP 0.29

1

STMicroelectronics SMA6F5.0AY, Uni-Directional TVS Diode, 600W, 2-Pin SMA Flat

STMicroelectronics SMA6F5.0AY, Uni-Directional TVS Diode, 600W, 2-Pin SMA Flat, Diode Configuration: Single, Maximum Clamping Voltage: 9.2 V, 13.4 V, Minimum Breakdown Voltage: 6.4V, Mounting Type: Surface Mount, Maximum Reverse Stand-off Voltage: 5V, Maximum Peak Pulse Current: 68 A, 298 A, ESD Protection: Yes, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C, Automotive Standard: AEC-Q101

GBP 0.29

1

STMicroelectronics SMB6F28A, Uni-Directional TVS Diode, 600W, 2-Pin SMB Flat (DO221-AA)

STMicroelectronics SMB6F28A, Uni-Directional TVS Diode, 600W, 2-Pin SMB Flat (DO221-AA), Diode Configuration: Single, Maximum Clamping Voltage: 45.4 V, 59 V, Minimum Breakdown Voltage: 31.1V, Mounting Type: Surface Mount, Maximum Reverse Stand-off Voltage: 28V, Maximum Peak Pulse Current: 13.8 A, 68 A, ESD Protection: Yes, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +175 °C, Capacitance: 150pF

GBP 0.23

1

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STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics STM32WB55RGV6, Wireless System On Chip SOC 68-Pin VFQFPN

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 Long Leeds STWA70N65DM6

STMicroelectronics SMP50-68, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-68, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SMP50-68, Bi-Directional TVS Diode, 2-Pin DO-214AC

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6

STMicroelectronics BZW50-68, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-68, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics BZW50-68, Uni-Directional TVS Diode, 5000W, 2-Pin R 6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 STW70N65DM6-4

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 Long Leeds STWA70N65DM6

STMicroelectronics SiC N-Channel MOSFET Module, 68 A, 650 V Depletion, 3-Pin TO-247 Long Leeds STWA70N65DM6

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2

STMicroelectronics SMA6F28A, Uni-Directional TVS Diode, 600W, 2-Pin SMA Flat

STMicroelectronics SMA6F28AY, Uni-Directional TVS Diode, 600W, 2-Pin SMA Flat

STMicroelectronics SMA6F5.0AY, Uni-Directional TVS Diode, 600W, 2-Pin SMA Flat

STMicroelectronics SMB6F28A, Uni-Directional TVS Diode, 600W, 2-Pin SMB Flat (DO221-AA)