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Toshiba 1Z18, Zener Diode, 18V ±10% 1 W 10μA, 2-Pin DO-15

Toshiba 1Z18, Zener Diode, 18V ±10% 1 W 10µA, 2-Pin DO-15

GBP 0.42

1

Toshiba 1ZB36(Q), Zener Diode, TVS, Regulator 36V ±10% 1 W 10μA, 2-Pin 3-3F2A

Toshiba 1ZB36(Q), Zener Diode, TVS, Regulator 36V ±10% 1 W 10µA, 2-Pin 3-3F2A

GBP 0.32

1

Toshiba TC7USB42MU, USB Power Switch IC 10-Pin, UQFN

Toshiba TC7USB42MU, USB Power Switch IC 10-Pin, UQFN, Switch On Resistance: 14Ω, Maximum Operating Supply Voltage: 4.3 V, Maximum Operating Current: 50mA, Mounting Type: Surface Mount, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Dimensions: 1.4 x 1.8 x 0.5mm, Minimum Input Voltage: 2.3 V

GBP 0.18

1

Toshiba TC7USB42MU, USB Power Switch IC 10-Pin, UQFN

Toshiba TC7USB42MU, USB Power Switch IC 10-Pin, UQFN, Switch On Resistance: 14Ω, Maximum Operating Supply Voltage: 4.3 V, Maximum Operating Current: 50mA, Mounting Type: Surface Mount, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Dimensions: 1.4 x 1.8 x 0.5mm, Minimum Input Voltage: 2.3 V

GBP 0.15

1

Toshiba TC7USB42MU, USB Power Switch IC 10-Pin, UQFN

Toshiba TC7USB42MU, USB Power Switch IC 10-Pin, UQFN, Switch On Resistance: 14Ω, Maximum Power Dissipation: 200 mW, Mounting Type: Surface Mount, Current Limit: 50mA, Dimensions: 1.4 x 1.8 x 0.5mm, Length: 1.4mm, Width: 1.8mm, Maximum Input Voltage: 4.3 V, Maximum Operating Temperature: +85 °C, Minimum Input Voltage: 2.3 V

GBP 0.18

1

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.52mm, Length: 4.9mm

GBP 0.75

1

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.52mm, Length: 4.9mm

GBP 0.71

1

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 17 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.9 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +20 V, Height: 1.52mm, Length: 4.9mm

GBP 0.41

1

Toshiba, 10 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L10F(F)

Toshiba, 10 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L10F(F), Line Regulation: 230 mV, Load Regulation: 90 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 3.2mA, Output Type: Fixed, Power Rating: 0.5W, Dimensions: 4.6 x 2.5 x 1.6mm, Length: 4.6mm

GBP 0.31

1

Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, 140 V, 3-Pin TO-3PN

Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, 140 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 100 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Height: 19mm

GBP 1.08

1

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

GBP 1.70

1

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

GBP 2.24

1

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

GBP 1.70

1

Toshiba N-Channel MOSFET, 10 A, 100 V, 3-Pin PW Mold 2SK3669(Q)

Toshiba N-Channel MOSFET, 10 A, 100 V, 3-Pin PW Mold 2SK3669(Q), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 20 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.3mm, Length: 6.5mm

GBP 0.74

1

Toshiba N-Channel MOSFET, 10 μA, 250 V, 3-Pin DPAK TK8P25DA,RQ(S

Toshiba N-Channel MOSFET, 10 μA, 250 V, 3-Pin DPAK TK8P25DA,RQ(S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +20 V, Forward Diode Voltage: 1.7V

GBP 0.19

1

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15mm, Length: 10mm

GBP 0.88

1

Toshiba 2SA1941-O(Q) PNP Bipolar Transistor, 10 A, 140 V, 3-Pin TO-3PN

Toshiba 2SA1941-O(Q) PNP Bipolar Transistor, 10 A, 140 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 100 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Maximum Collector Emitter Saturation Voltage: 2 V, Maximum Operating Temperature: +150 °C

GBP 1.27

1

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59), Maximum Gate Source Voltage: -30 V, Maximum Drain Gate Voltage: -50V, Configuration: Single, Mounting Type: Surface Mount, Dimensions: 2.9 x 1.5 x 1.1mm, Length: 2.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -55 °C

GBP 0.30

1

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59), Maximum Gate Source Voltage: -30 V, Maximum Drain Gate Voltage: -50V, Configuration: Single, Mounting Type: Surface Mount, Dimensions: 2.9 x 1.5 x 1.1mm, Length: 2.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -55 °C

GBP 0.29

1

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59), Idss Drain-Source Cut-off Current: 0.3 → 0.75mA, Maximum Gate Source Voltage: -30 V, Maximum Drain Gate Voltage: -50V, Configuration: Single, Mounting Type: Surface Mount, Dimensions: 2.9 x 1.5 x 1.1mm, Length: 2.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -55 °C

GBP 0.20

1

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59), Idss Drain-Source Cut-off Current: 1.2 → 3.0mA, Maximum Gate Source Voltage: -30 V, Maximum Drain Gate Voltage: -50V, Configuration: Single, Mounting Type: Surface Mount, Dimensions: 2.9 x 1.5 x 1.1mm, Length: 2.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -55 °C

GBP 0.19

1

Toshiba N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3)

Toshiba N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.5mm, Length: 1.2mm

GBP 0.17

1

Toshiba N-Channel MOSFET, 500 mA, 20 V, 3-Pin UFM SSM3K36TU(TE85L)

Toshiba N-Channel MOSFET, 500 mA, 20 V, 3-Pin UFM SSM3K36TU(TE85L), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.52 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 500 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.7mm, Length: 1.2mm

GBP 0.11

1

Toshiba N-Channel MOSFET, 100 mA, 20 V, 3-Pin USM SSM3K16FU(F)

Toshiba N-Channel MOSFET, 100 mA, 20 V, 3-Pin USM SSM3K16FU(F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.9mm, Length: 2mm

GBP 0.09

1

Toshiba N-Channel MOSFET, 50 mA, 20 V, 3-Pin USM 2SK1829(TE85L,F)

Toshiba N-Channel MOSFET, 50 mA, 20 V, 3-Pin USM 2SK1829(TE85L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.9mm, Length: 2mm

GBP 0.07

1

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Toshiba 1Z18, Zener Diode, 18V ±10% 1 W 10μA, 2-Pin DO-15

Toshiba 1ZB36(Q), Zener Diode, TVS, Regulator 36V ±10% 1 W 10μA, 2-Pin 3-3F2A

Toshiba TC7USB42MU, USB Power Switch IC 10-Pin, UQFN

Toshiba TC7USB42MU, USB Power Switch IC 10-Pin, UQFN

Toshiba TC7USB42MU, USB Power Switch IC 10-Pin, UQFN

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Toshiba, 10 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L10F(F)

Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, 140 V, 3-Pin TO-3PN

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E

Toshiba N-Channel MOSFET, 10 A, 100 V, 3-Pin PW Mold 2SK3669(Q)

Toshiba N-Channel MOSFET, 10 μA, 250 V, 3-Pin DPAK TK8P25DA,RQ(S

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S

Toshiba 2SA1941-O(Q) PNP Bipolar Transistor, 10 A, 140 V, 3-Pin TO-3PN

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

Toshiba N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3)

Toshiba N-Channel MOSFET, 500 mA, 20 V, 3-Pin UFM SSM3K36TU(TE85L)

Toshiba N-Channel MOSFET, 100 mA, 20 V, 3-Pin USM SSM3K16FU(F)

Toshiba N-Channel MOSFET, 50 mA, 20 V, 3-Pin USM 2SK1829(TE85L,F)