Vishay N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-247AC SiHG47N60E-GE3
Vishay N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-247AC SiHG47N60E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 64 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 357 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 20.7mm, Length: 15.87mm