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Vishay Siliconix 45V 300A, Dual Schottky Diode, 3-Pin TO-240AA VS-VSKCS301/045

Vishay Siliconix 45V 300A, Dual Schottky Diode, 3-Pin TO-240AA VS-VSKCS301/045, Mounting Type: Panel Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 690mV, Peak Non-Repetitive Forward Surge Current: 8.6kA

GBP 28.39

1

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin 1212 SQS966ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin 1212 SQS966ENW-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 27.8 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.1V

GBP 0.27

1

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin 1212 SQS966ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin 1212 SQS966ENW-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 27.8 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.1V

GBP 0.28

1

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin 1212 SQS944ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin 1212 SQS944ENW-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 27.8 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.1V

GBP 0.51

1

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin 1212 SQS966ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin 1212 SQS966ENW-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 27.8 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.1V

GBP 0.31

1

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin 1212 SQS944ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin 1212 SQS944ENW-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 27.8 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.1V

GBP 0.59

1

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin 1212 SQS944ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin 1212 SQS944ENW-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 27.8 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.1V

GBP 0.26

1

Vishay Siliconix Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 46.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 0.7V

GBP 0.49

1

Vishay Siliconix Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 46.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 0.7V

GBP 0.08

1

Vishay Siliconix Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 46.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 0.7V

GBP 0.10

1

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SIRC06DP-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SIRC06DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 0.7V

GBP 0.08

1

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SIRC06DP-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SIRC06DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 0.7V

GBP 0.10

1

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SIRC06DP-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SIRC06DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 0.7V

GBP 0.10

1

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 16.7 W, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.75mm

GBP 0.91

1

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 16.7 W, Maximum Gate Source Voltage: -12 V, +16 V, Forward Diode Voltage: 1.2V, Height: 0.75mm

GBP 0.45

1

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5 SiZF906ADT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5 SiZF906ADT-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 83 W, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.7mm

GBP 0.85

1

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5 SiZF906ADT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5 SiZF906ADT-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 83 W, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.7mm

GBP 0.42

1

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 16.7 W, Maximum Gate Source Voltage: -12 V, +16 V, Forward Diode Voltage: 1.2V, Height: 0.75mm

GBP 0.69

1

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 16.7 W, Maximum Gate Source Voltage: -12 V, +16 V, Forward Diode Voltage: 1.2V, Height: 0.75mm

GBP 0.90

1

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 16.7 W, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.75mm

GBP 0.62

1

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5 SiZF906ADT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5 SiZF906ADT-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.2V, Maximum Power Dissipation: 83 W, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.7mm

GBP 0.42

1

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 16.7 W, Maximum Gate Source Voltage: -16 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.75mm

GBP 0.45

1

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 34 W, 34 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.2V

GBP 0.41

1

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 34 W, 34 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.2V

GBP 0.41

1

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 34 (N Channel) W, 34 (P Channel) W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.2V

GBP 0.40

1

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Vishay Siliconix 45V 300A, Dual Schottky Diode, 3-Pin TO-240AA VS-VSKCS301/045

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin 1212 SQS966ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin 1212 SQS966ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin 1212 SQS944ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 60 V, 8-Pin 1212 SQS966ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin 1212 SQS944ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin 1212 SQS944ENW-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 40 A, 30 V, 8-Pin 1212 SISC06DN-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SIRC06DP-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SIRC06DP-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin SO-8 SIRC06DP-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5 SiZF906ADT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5 SiZF906ADT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5 SiZF906ADT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3