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Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 760 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.01

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

GBP 0.56

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

GBP 1.19

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Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3

Vishay Siliconix P-Channel MOSFET, 9.4 A, 200 V, 8-Pin SO-8 SQJ431AEP-T1_GE3