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onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 1.90

1

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220F FDPF4D5N10C

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220F FDPF4D5N10C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 37.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 2.93

1

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 1.85

1

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 4.15

1

onsemi N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN NVMFS5C426NLT1G

onsemi N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN NVMFS5C426NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 1.18

1

onsemi N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN NVMFS5C426NLT1G

onsemi N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN NVMFS5C426NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 1.51

1

onsemi N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN NVMFS5C426NLT1G

onsemi N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN NVMFS5C426NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.82

1

onsemi Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 FDC6305N

onsemi Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 FDC6305N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 128 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 960 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm, Length: 3mm

GBP 0.27

1

onsemi Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 FDC6305N

onsemi Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 FDC6305N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 128 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 960 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm, Length: 3mm

GBP 0.15

1

onsemi Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 FDC6305N

onsemi Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 FDC6305N, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 128 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 960 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1mm, Length: 3mm

GBP 0.36

1

onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK ON Semiconductor NVMJS1D3N04CTWG

onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK ON Semiconductor NVMJS1D3N04CTWG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.63

1

onsemi NV25010DWHFT3G, 1kbit EEPROM Memory 8-Pin SOIC SPI

onsemi NV25010DWHFT3G, 1kbit EEPROM Memory 8-Pin SOIC SPI, Mounting Type: Surface Mount, Organisation: 128 x 8 bit, Minimum Operating Supply Voltage: 2.5 V, Maximum Operating Supply Voltage: 5.5 V, Number of Bits per Word: 8bit, Length: 5mm, Width: 4mm, Height: 1.5mm, Dimensions: 5 x 4 x 1.5mm, Automotive Standard: AEC-Q100, Data Retention: 200yr

GBP 0.39

1

onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK ON Semiconductor NVMJS1D3N04CTWG

onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK ON Semiconductor NVMJS1D3N04CTWG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.40

1

onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK ON Semiconductor NVMJS1D3N04CTWG

onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK ON Semiconductor NVMJS1D3N04CTWG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.17

1

onsemi NV25010DWHFT3G, 1kbit EEPROM Memory 8-Pin SOIC SPI

onsemi NV25010DWHFT3G, 1kbit EEPROM Memory 8-Pin SOIC SPI, Mounting Type: Surface Mount, Organisation: 128 x 8 bit, Minimum Operating Supply Voltage: 2.5 V, Maximum Operating Supply Voltage: 5.5 V, Number of Bits per Word: 8bit, Dimensions: 5 x 4 x 1.5mm, Automotive Standard: AEC-Q100, Data Retention: 200yr, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 0.21

1

onsemi CAT25010LI-G, 1kbit EEPROM Memory 8-Pin PDIP SPI

onsemi CAT25010LI-G, 1kbit EEPROM Memory 8-Pin PDIP SPI, Mounting Type: Through Hole, Organisation: 128 x 8 bit, Minimum Operating Supply Voltage: 1.8 V, Maximum Operating Supply Voltage: 5.5 V, Number of Bits per Word: 8bit, Length: 10.16mm, Width: 7.11mm, Height: 4.95mm, Dimensions: 10.16 x 7.11 x 4.95mm, Data Retention: 100yr, Maximum Operating Temperature: +85 °C

GBP 0.27

1

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 7.49mm

GBP 0.42

1

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 7.49mm

GBP 0.70

1

onsemi NV25010DWHFT3G, 1kbit EEPROM Memory 8-Pin SOIC SPI

onsemi NV25010DWHFT3G, 1kbit EEPROM Memory 8-Pin SOIC SPI, Mounting Type: Surface Mount, Organisation: 128 x 8 bit, Minimum Operating Supply Voltage: 2.5 V, Maximum Operating Supply Voltage: 5.5 V, Number of Bits per Word: 8bit, Dimensions: 5 x 4 x 1.5mm, Automotive Standard: AEC-Q100, Data Retention: 200yr, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 0.20

1

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 26 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 128 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 7.49mm

GBP 0.52

1

onsemi CAT24M01HU5I-GT3, 1Mbit EEPROM Memory, 400ns 8-Pin UDFN Serial-I2C

onsemi CAT24M01HU5I-GT3, 1Mbit EEPROM Memory, 400ns 8-Pin UDFN Serial-I2C, Mounting Type: Surface Mount, Organisation: 128 x 8 bit, Minimum Operating Supply Voltage: 1.8 V, Maximum Operating Supply Voltage: 5.5 V, Number of Bits per Word: 8bit, Length: 3mm, Width: 2mm, Height: 0.5mm, Dimensions: 3 x 2 x 0.5mm, Data Retention: 100yr, Maximum Operating Temperature: +85 °C

GBP 1.40

1

onsemi CAT93C46VP2I-GT3, 1kbit EEPROM Memory, 250ns 8-Pin TDFN Serial-Microwire

onsemi CAT93C46VP2I-GT3, 1kbit EEPROM Memory, 250ns 8-Pin TDFN Serial-Microwire, Mounting Type: Surface Mount, Organisation: 128 x 8 bit, Minimum Operating Supply Voltage: 1.8 V, Maximum Operating Supply Voltage: 5.5 V, Number of Bits per Word: 8bit, Length: 3.1mm, Width: 2.1mm, Height: 0.75mm, Dimensions: 3.1 x 2.1 x 0.75mm, Maximum Operating Temperature: +85 °C

GBP 0.33

1

onsemi CAT24C21LI, 1kbit EEPROM Memory 8-Pin PDIP Serial-I2C

onsemi CAT24C21LI, 1kbit EEPROM Memory 8-Pin PDIP Serial-I2C, Mounting Type: Through Hole, Organisation: 128 x 8 bit, Minimum Operating Supply Voltage: 2.5 V, Maximum Operating Supply Voltage: 5.5 V, Number of Bits per Word: 8bit, Length: 10.16mm, Width: 7.11mm, Height: 4.95mm, Dimensions: 10.16 x 7.11 x 4.95mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 0.42

1

onsemi CAT24M01HU5I-GT3, 1Mbit EEPROM Memory, 400ns 8-Pin UDFN Serial-I2C

onsemi CAT24M01HU5I-GT3, 1Mbit EEPROM Memory, 400ns 8-Pin UDFN Serial-I2C, Mounting Type: Surface Mount, Organisation: 128 x 8 bit, Minimum Operating Supply Voltage: 1.8 V, Maximum Operating Supply Voltage: 5.5 V, Number of Bits per Word: 8bit, Dimensions: 3 x 2 x 0.5mm, Data Retention: 100yr, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Number of Words: 131072

GBP 1.57

1

onsemi CAT24M01XI, 1MB EEPROM Memory, 400ns 8-Pin SOIC Serial-I2C

onsemi CAT24M01XI, 1MB EEPROM Memory, 400ns 8-Pin SOIC Serial-I2C, Mounting Type: Surface Mount, Organisation: 128 x 8 bit, Minimum Operating Supply Voltage: 1.8 V, Maximum Operating Supply Voltage: 5.5 V, Number of Bits per Word: 8bit, Length: 5.33mm, Width: 5.38mm, Height: 1.78mm, Dimensions: 5.33 x 5.38 x 1.78mm, Data Retention: 100yr, Maximum Operating Temperature: +85 °C, MPN: CAT24M01XI-T2

GBP 1.13

1

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onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220F FDPF4D5N10C

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C

onsemi N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN NVMFS5C426NLT1G

onsemi N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN NVMFS5C426NLT1G

onsemi N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN NVMFS5C426NLT1G

onsemi Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 FDC6305N

onsemi Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 FDC6305N

onsemi Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 FDC6305N

onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK ON Semiconductor NVMJS1D3N04CTWG

onsemi NV25010DWHFT3G, 1kbit EEPROM Memory 8-Pin SOIC SPI

onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK ON Semiconductor NVMJS1D3N04CTWG

onsemi N-Channel MOSFET, 235 A, 40 V, 8-Pin LFPAK ON Semiconductor NVMJS1D3N04CTWG

onsemi NV25010DWHFT3G, 1kbit EEPROM Memory 8-Pin SOIC SPI

onsemi CAT25010LI-G, 1kbit EEPROM Memory 8-Pin PDIP SPI

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi NV25010DWHFT3G, 1kbit EEPROM Memory 8-Pin SOIC SPI

onsemi N-Channel MOSFET, 20 A, 55 V, 3-Pin DPAK HUF75329D3ST

onsemi CAT24M01HU5I-GT3, 1Mbit EEPROM Memory, 400ns 8-Pin UDFN Serial-I2C

onsemi CAT93C46VP2I-GT3, 1kbit EEPROM Memory, 250ns 8-Pin TDFN Serial-Microwire

onsemi CAT24C21LI, 1kbit EEPROM Memory 8-Pin PDIP Serial-I2C

onsemi CAT24M01HU5I-GT3, 1Mbit EEPROM Memory, 400ns 8-Pin UDFN Serial-I2C

onsemi CAT24M01XI, 1MB EEPROM Memory, 400ns 8-Pin SOIC Serial-I2C