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onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole, Maximum Power Dissipation: 106 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 15.34

1

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole, Maximum Power Dissipation: 106 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.68

1

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole, Switching Speed: 20kHz, Maximum Power Dissipation: 106 W, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.82

1

onsemi NJW0302G PNP Transistor, 15 A, 250 V, 3-Pin TO-3P

onsemi NJW0302G PNP Transistor, 15 A, 250 V, 3-Pin TO-3P, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 250 V dc, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 1 MHz, Dimensions: 15.8 x 5 x 20.1mm, Maximum Collector Emitter Saturation Voltage: 1 V dc, Maximum Operating Temperature: +150 °C

GBP 9.87

1

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onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi NJW0302G PNP Transistor, 15 A, 250 V, 3-Pin TO-3P