KlikkMedia | Google Hirdetés X Online Marketing Tanácsadás

onsemi 2N6052G PNP Darlington Transistor, 12 A 100 V HFE:100, 2-Pin TO-204

onsemi 2N6052G PNP Darlington Transistor, 12 A 100 V HFE:100, 2-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 1mA, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 6.79

1

onsemi 2N6052G PNP Darlington Transistor, 12 A 100 V HFE:100, 2-Pin TO-204

onsemi 2N6052G PNP Darlington Transistor, 12 A 100 V HFE:100, 2-Pin TO-204, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 1mA, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.08

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

GBP 6.09

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 660 W, Transistor Configuration: Single

GBP 6.09

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 660 W, Transistor Configuration: Single

GBP 7.07

1

onsemi N-Channel MOSFET Transistor, 201 A, 100 V, 3-Pin D2PAK NTB004N10G

onsemi N-Channel MOSFET Transistor, 201 A, 100 V, 3-Pin D2PAK NTB004N10G, Maximum Drain Source Resistance: 0.00682 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 4.40

1

onsemi AFGHL50T65SQDCOS NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQDCOS NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Power Dissipation: 238 W, Transistor Configuration: Single, Maximum Operating Frequency: 1 MHz, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C

GBP 7.67

1

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 268 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.41

1

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.68

1

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 6.14

1

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 535 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16.25 x 5.3 x 21.4mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.84

1

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 535 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 16.25mm, Width: 5.3mm, Height: 21.4mm, Dimensions: 16.25 x 5.3 x 21.4mm, Maximum Operating Temperature: +175 °C

GBP 7.82

1

onsemi N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A

onsemi N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 5.06

1

onsemi N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A

onsemi N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 333 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 4.56

1

onsemi MJ4502G PNP Transistor, 30 A, 100 V, 2-Pin TO-204AA

onsemi MJ4502G PNP Transistor, 30 A, 100 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 200 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 4 V, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: 1.3 V, Maximum Collector Emitter Saturation Voltage: 0.8 V

GBP 5.46

1

onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 349 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16.25 x 5.3 x 21.4mm, Gate Capacitance: 3085pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.74

1

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-247 HUF75652G3

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-247 HUF75652G3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 515 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.82mm, Length: 15.87mm

GBP 5.50

1

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-247 HUF75652G3

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-247 HUF75652G3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 515 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.82mm, Length: 15.87mm

GBP 4.67

1

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-247 HUF75652G3

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-247 HUF75652G3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 515 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.82mm, Length: 15.87mm

GBP 4.79

1

onsemi N-Channel MOSFET, 140 A, 100 V, 3-Pin TO-3PN FQA140N10

onsemi N-Channel MOSFET, 140 A, 100 V, 3-Pin TO-3PN FQA140N10, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 375 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 18.9mm, Length: 15.8mm

GBP 4.75

1

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA, Maximum DC Collector Current: 20 (Continuous) A, 40 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.49

1

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA, Maximum DC Collector Current: 20 (Continuous) A, 40 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.06

1

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220F FDPF4D5N10C

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220F FDPF4D5N10C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 37.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 5.54

1

onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220 FDP2D3N10C

onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220 FDP2D3N10C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 214 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 4.44

1

onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220F FDPF2D3N10C

onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220F FDPF2D3N10C, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.3V

GBP 6.03

1

Performance Marketing Agency

Gain the Advantage with KlikkMedia

Brand

Gender

Merchant

Price (EUR)

onsemi 2N6052G PNP Darlington Transistor, 12 A 100 V HFE:100, 2-Pin TO-204

onsemi 2N6052G PNP Darlington Transistor, 12 A 100 V HFE:100, 2-Pin TO-204

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi N-Channel MOSFET Transistor, 201 A, 100 V, 3-Pin D2PAK NTB004N10G

onsemi AFGHL50T65SQDCOS NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A

onsemi N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK FDB035N10A

onsemi MJ4502G PNP Transistor, 30 A, 100 V, 2-Pin TO-204AA

onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-247 HUF75652G3

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-247 HUF75652G3

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-247 HUF75652G3

onsemi N-Channel MOSFET, 140 A, 100 V, 3-Pin TO-3PN FQA140N10

onsemi 2N6287G PNP Transistor, 20 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220F FDPF4D5N10C

onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220 FDP2D3N10C

onsemi N-Channel MOSFET, 222 A, 100 V, 3-Pin TO-220F FDPF2D3N10C