onsemi NXH100B120H3Q0PTGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount onsemi NXH100B120H3Q0PTGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 186 W, Dimensions: 66.2 x 32.8 x 11.9mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 32.8mm GBP 47.79 1
onsemi ON Semiconductor NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount onsemi ON Semiconductor NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 186 W, Dimensions: 66.2 x 32.8 x 11.9mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 32.8mm GBP 47.79 1
